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What is 2N3440?

This electronic component, produced by the manufacturer "Motorola Semiconductors", performs the same function as "NPN Transistor".


2N3440 Datasheet PDF - Motorola Semiconductors

Part Number 2N3440
Description NPN Transistor
Manufacturers Motorola Semiconductors 
Logo Motorola Semiconductors Logo 


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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Total Device Dissipation
@ Ta = 50°C
Derate above 50°C
Operating and Storage
Junction Temperature
Range
PIMP
NPN
Symbol 2N5415 2N5416 2N3439 2N3440
vCEO 200 300 350 250
v CBO
200
350
450
300
VEBO
4.0
6.0
7.0
7.0
'B 0.5
ic 1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
PD
PD
PD
TJ- Tstg
- 1.0
5.7
10 5.0
57 28.6
-
1.0
6.7
- 65 to + 200
Watts
mW/'C
Watts
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Rejc
R 0JA
2N5415 2N3439
2N5416 2N3440
17.5
35
150 175
Unit
°C/W
°C/W
2N3439, 2N3440 NPN
2N541S, 2N5416 PNP
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining VoltageO)
C(l = 50 mAdc, Ib = 0)
2N5415
2N5416
2N3439
2N3440
Symbol
VcEO(sus)
•Collector Cutoff Current
(VCE = 300 Vdc< Ib = 0)
(YCE = 200 Vdc, 1b = 0)
•Collector Cutoff Current
(Vce = 450 Vdc, Vbe = 1-5 Vdc)
(Vce = 300 Vdc, V B E = 1-5 Vdc)
Collector Cutoff Current
(Vcb = 175 Vdc, Ie = 0)
(Vcb = 280 Vdc, El = 0)
(VC b = 360 Vdc, El = 0)
(Vcb = 250 Vdc, El = 0)
Emitter Cutoff Current
(Veb = 4.0 Vdc, Ie = 0)
(V£B = 6.0 Vdc, Ic = 0)
ON CHARACTERISTICS)!)
DC Current Gain
(lC = 2.0 mAdc, V CE = 10 Vdc)
•dC = 20 mAdc, VCE = 10 Vdc)
,
2 N 3439
2N3440
2N3439
2N3440
2N5415
2N5416
2N3439
2N3440
2N5415
2N5416, 2N3439, 2N3440 -
'CEO
ICEX
'CBO
'EBO
2N343&
2N3439, 2N3440
hpE
*dC = 50 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
C(l = 50 mAdc, Ib = 4.0 mAdc)
Base-Emitter Saturation Voltage
(lC = 50 mAdc, Ib = 4.0 mAdc)
•Indicates Data in Addition to JEDEC Requirements.
2N5415
2N5416
2N3439, 2N3440
2N3439, 2N3440
v CE(sat)
V BE(sat )
Min
200
300
350
250
-
-
-
-
30
40
30
30
-
20
50
500
500
50
50
20
20
20
20
160
150
120
0.5
- 1.3
Unit
Vdc
/xAdc
yuAdc
tiAdc
/iAdc
Vdc
Vdc
4-81

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2N3440 equivalent
2N3439, 2N3440 NPN / 2N5415, 2N5416 PNP
Tj = 25»C
"1 II*
--V BE(at>» tc/i 1=10
V BE*Vci = 1 IV
FIGURE 11 - "ON" VOLTAGES
1.0
i
1i
Tj = 25°C
1-
o °- 6
>
t<o
o
\'8E(sat).
VBE'*'VCE = 10 V
1.
~- .-£>
1
/
f
V CE(at)
U1 C/»B =
"^c/ B = 5.0
5.0 7.0 10
20 30
50 70 100
IC. COLLECTOR CURRENT (mA)
200 300 500
0.2
VCE(sat)
2.0 3.0
5.0
ic IB" 10
IC/lB = 5.0
10
20 30
50
IC, COLLECTOR CURRENT (mA)
100
200
FIGURE 12 - TEMPERATURE COEFFICIENTS
II I
II
It
l/L
MI I 1 1
I
II
utt
FE/
||
-55°
]
5.0 7.0 10
20 30
50
IC. COLLECTOR CURRENT (mA)
70 100
200
+0.8
1
I
i i ii
1
cj -•APPLIESFOR lc/lB<
1
1 1 i1
1
E *«VC 'or VcE(sat)
,
3"
c_>
""I
250C
s
cr
I-
2 1-2
S
- -1.6
* -2.0
2.0
t*VB r VfiE
3.0 5.0 7.0
10
20 30
50 70 100
IC, COLLECTOR CURRENT (/jA)
200
[III
VCE = 2C
150°C
mnor
FIGURE 13 - COLLECTOR CUTOFF REGION
10 5
I
10*
<
- 103
z
| 102
o
o
H-
S 10'
II
I
I
I1
Tj = 150°C
100°C
icon
10"
- REVERSE -
*w 1
-FOR' rfARO-
I
1
'10"
25°C
.
I
DRWAR
+0.4
+0.3
+0.2 +0.1
-0.1
-0.2
-0.3 -0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS) -
-0.5
-0.6
-0.2 -0.1
+0.1 +0.2 +0.3 +0.4
VfiE. BASE-EMITTER VOLTAGE (VOLTS)
4-85


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2N3440 datasheet


1. Vceo=250V, NPN Transistor - Microsemi

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