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PDF 2N5400 Data sheet ( Hoja de datos )
| Número de pieza | 2N5400 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2N5400
-0.6 A, -130 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplification in high voltage
Applications such as telephony
Low current(max.600mA)
High voltage(max.130V)
G
H
Collector
Base
Emitter
J
AD
B
K
E CF
TO-92
Emitter
Base
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-130
-120
-5
-600
625
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
-130
-
-
V IC=-100μA, IE = 0A
Collector to Emitter Breakdown Voltage V(BR)CEO -120
-
-
V IC=-1mA, IB = 0A
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE=-10μA, IC = 0A
Collector Cut-Off Current
ICBO - - -0.1 μA VCB=-100V, IE = 0 A
Emitter Cut-Off Current
IEBO - - -0.1 μA VEB=-3V, IC =0 mA
hFE1
30 -
-
VCE=-5V, IC=-1mA
DC Current Gain
hFE2
40 - 180
VCE=-5V, IC=-10mA
hFE3
40 -
-
VCE=-5V, IC=-50mA
Collector to Emitter Saturation Voltage
VCE(sat)
--
--
- -0.2 V IC=-10mA, IB=-1mA
- -0.5 V IC=-50mA, IB=-5mA
Base to Emitter Voltage
VBE(sat)
--
--
-
-
-1 V IC=-10mA, IB=-1mA
-1 V IC=-50mA, IB=-5mA
Collector Output Capacitance
Cob - - 6 pF VCB = -10V, IE = 0A, f=1MHz
Transition Frequency
fT 100 - - MHz VCE = -10V, IC = -10mA, f=30MHz
http://www.SeCoSGmbH.com/
29-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
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