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PDF MMBT2222A Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222A | |
| Descripción | Surface Mount Si-Epi-Planar Switching Transistors | |
| Fabricantes | Diotec | |
| Logotipo |  |
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 1. NPN Planar Transistor - Cystek  Hay una vista previa y un enlace de descarga de MMBT2222A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MMBT2222A
MMBT2222A
NPN
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
Version 2015-05-12
0.4+0.1
-0.05
2.9 ±0.1
3
Type
Code
1.1+0.1
-0.2
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
12
1.9±0.1
Dimensions - Maße [mm]
1=B 2=E 3=C
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
IC
Tj
TS
Grenzwerte (TA = 25°C)
MMBT2222A
40 V
75 V
6V
250 mW 1)
600 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.1 mA,
IC = 1 mA,
IC = 10 mA,
IC = 150 mA,
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
IC = 500 mA,
VCE = 10 V 2)
MMBT2222A
h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA
Small signal current gain
Kleinsignal-Stromverstärkung
MMBT2222A
Input impedance – Eingangs-Impedanz
MMBT2222A
Output admittance – Ausgangs-Leitwert
MMBT2222A
hFE
hFE
hFE
hFE
hFE
hfe
hie
hoe
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
35 –
–
50 –
–
75 –
–
100 – 300
40 –
–
75 – 375
0.25 kΩ – 1.25 kΩ
25 µS
– 200 µS
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT2222A.PDF ] | |
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