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What is T2R7F90SB?

This electronic component, produced by the manufacturer "SHINDENGEN", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


T2R7F90SB Datasheet PDF - SHINDENGEN

Part Number T2R7F90SB
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers SHINDENGEN 
Logo SHINDENGEN Logo 


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T2R7F90SB
900V2.7A
特長
絶縁タイプ
高耐圧
高速スイッチング
Feature
IsolatedPackage
HighVoltage
HighSpeedSwitching
IGBT
■外観図 OUTLINE
PackageFTO-220AG3pin
Unit:mm
0000
T2R7SB
外形図については新電元 Webサイトをご参照下さい。捺印表示については
捺印仕様をご確認下さい。
Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe
marking,refertothespecification"Marking,TerminalConnection".
■定格表 RATINGS
●絶対最大定格 AbsoluteMaximum Ratings指定のない場合 Tc=25℃/unlessotherwisespecified)
項目
Item
記号
Symbol
条件
Conditions
規格値
Ratings
単位
Unit
保存温度
StorageTemperature
チャネル温度
ChannelTemperature
コレクタ・エミッタ間電圧
Collector-EmitterVoltage
ゲート・エミッタ間電圧
Gate-EmitterVoltage
コレクタ電流(直流)
ContinuousCollectorCurrent(DC)
コレクタ電流(ピーク)
ContinuousCollectorCurrent(Peak)
全損失
TotalPowerDissipation
繰り返しアバランシェ電流
RepetitiveAvalancheCurrent
単発アバランシェエネルギー
SingleAvalancheEnergy
繰り返しアバランシェエネルギー
RepetitiveAvalancheEnergy
絶縁耐圧
DielectricStrength
締め付けトルク
MountingTorque
Tstg
Tch
VCES
VGES
IC
ICP
パルス幅 10μs,duty=1/100
Pulsewidth10µs,duty=1/100
PT
IAR StartingTch=25℃,Tch≦150℃
EAS StartingTch=25℃,Tch≦150℃
EAR StartingTch=25℃,Tch≦150℃
Vdis
一括端子・ケース間,AC1分間印加
Terminalstocase,AC1minute
TOR
(推奨値:0.3N・m)
(Recommendedtorque:0.3Nm)
-55~150
150
900
±30
2.7
5.4
56.5
2.7
15
1.5
2
0.5
V
A
W
A
mJ
mJ
kV
N・m
●電気的・熱的特性 ElectricalCharacteristics指定のない場合
項目
Item
記号
Symbol
条件
Conditions
コレクタ・エミッタ間降伏電圧
Collector-EmitterBreakdownVoltage
V(BR)CES
IC=1mA,VGE=0V
コレクタ遮断電流
ZeroGateVoltageCollectorCurrent
ICES VCE=900V,VGE=0V
ゲート漏れ電流
Gate-EmitterLeakageCurrent
IGES VGE=±30V,VCE=0V
コレクタ・エミッタ間オン電圧
StaticCollector-EmitterSaturationVoltage
VCE(sat)
IC=2.7A,VGE=10V
ゲートしきい値電圧
GateThresholdVoltage
VTH IC=1mA,VCE=10V
熱抵抗
ThermalResistance
θjc
接合部・ケース間
Junctiontocase
ゲート全電荷量
TotalGateCharge
Qg VCC=400V,VGE=10V,IC=2.7A
入力容量
InputCapacitance
Cies
帰還容量
ReverseTransferCapacitance
Cres VCE=10V,VGE=0V,f=1MHz
出力容量
OutputCapacitance
Coes
ターンオン遅延時間
Turn-ondelaytime
td(on)
上昇時間
Risetime
tr IC=3A,RL=150Ω,VCC=450V,
ターンオフ遅延時間
Turn-offdelaytime
td(off) VGE(+)=10V,VGE(-)=0V
降下時間
Falltime
tf
Tc=25℃/unlessotherwisespecified)
規格値 Ratings 単位
MIN TYP MAX Unit
900 ─ ─
V
─ ─ 10
μA
─ ─ ±0.1
─ 8 10
2.5 3.0 3.5
V
─ ─ 2.21 ℃/W
─ 11 ─ nC
─ 218 ─
─ 16 ─ pF
─ 38 ─
─ 70 ─
─ 55 ─
─ 130 ─
ns
─ 60 ─
IGBT-p2014.03〉)
www.shindengen.co.jp/product/semi/


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for T2R7F90SB electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
T2R7F90SBThe function is IGBT ( Insulated Gate Bipolar Transistor ). SHINDENGENSHINDENGEN

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