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PDF P2FE60VX5K Data sheet ( Hoja de datos )
| Número de pieza | P2FE60VX5K | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | SHINDENGEN | |
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Nch
P2FE60VX5K
Power MOSFET
OUTLINE
Package FE
600V 2A
Unit : mm
2E605
00
00
（②④）
Feature
（①）
（③）
RATINGS
Absolute Maximum Ratings
For details of the outline dimensions, refer to our web site. As for the
marking, refer to the specification “Marking, Terminal Connection”.
Item Symbol
Conditions
Storage Temperature
Channel Temperature
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current DC
Continuous Drain Current Peak)
Continuous Source Current DC
Total Power Dissipation
Repetitive Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Energy
Drain-Source Diode di/dt Strength
Tstg
Tch
VDSS
VGSS
ID
IDP
IS
PT
IAR
EAS
EAR
di/dt
Pulse width 10μs, duty = 1/100
Starting Tch=25 Tch 150
Starting Tch=25 Tch 150
Starting Tch=25 Tch 150
Is=2A,Tc=25
Electrical Characteristics
Item Symbol
Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
V(BR)DSS
IDSS
IGSS
Forward Transconductance
Static Drain-Source On-state Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
gfs
R(DS)ON
VTH
VSD
θjc
Qg
Ciss
Crss
Coss
td (on)
tr
td (off)
tf
ID = 1mA, VGS = 0V
VDS = 600V, VGS = 0V
VGS = ±25V, VDS = 0V
ID = 1A, VDS = 10V
ID = 1A, VGS = 10V
ID = 1mA, VDS = 10V
IS = 1A, VGS = 0V
Junction to case
VDD = 400V, VGS = 10V
ID = 2A
VDS = 50V, VGS = 0V, f = 1MH
ID = 1A, RL = 150Ω
VDD = 150V, Rg=50Ω
VGS(+) = 10V, VGS(−) = 0V
Ratings
Unit
Ratings
Unit
www.shindengen.co.jp/product/semi/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P2FE60VX5K.PDF ] | |
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