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PDF SUM90142E Data sheet ( Hoja de datos )
| Número de pieza | SUM90142E | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SUM90142E
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
TO-263
Top View
S
D
G
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 7.5 V
Qg typ. (nC)
ID (A)
Configuration
200
0.0150
0.0165
58
90
Single
FEATURES
• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
• Synchronous rectification
• DC/DC converter
• Motor drive switch
• DC/AC inverter
• Solar micro inverter
• Class D audio amplifier
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-263
SUM90142E-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current (t = 100 μs)
TC = 25 °C
TC = 125 °C
Continuous source-drain diode current
Single pulse avalanche current a
Single pulse avalanche energy a
L = 0.1 mH
Maximum power dissipation
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
200
± 20
90
52
240
90
60
180
375 b
125 b
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) c
Maximum junction-to-case (drain)
Steady state
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
SYMBOL
RthJA
RthJC
MAXIMUM
40
0.4
UNIT
°C/W
S16-1636-Rev. A, 22-Aug-16
1
Document Number: 75050
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
110 10000
88
1000
66
44
100
22
0 10
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
2nd line
Current Derating a
SUM90142E
Vishay Siliconix
260
ID = 10 mA
250
240
230
220
Axis Title
10000
1000
100
Axis Title
100
10
150 °C
25 °C
10000
1000
100
210
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
1
0.00001
0.0001
0.001
Time (s)
2nd line
0.01
IDAV vs. Time
10
0.1
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1636-Rev. A, 22-Aug-16
5
Document Number: 75050
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SUM90142E.PDF ] | |
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