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What is MT36LSDT12872?

This electronic component, produced by the manufacturer "Micron", performs the same function as "1GB Synchronous DRAM Module".


MT36LSDT12872 Datasheet PDF - Micron

Part Number MT36LSDT12872
Description 1GB Synchronous DRAM Module
Manufacturers Micron 
Logo Micron Logo 


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1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM
Features
Synchronous DRAM Module
MT36LSDT12872 – 1GB
MT36LSDT25672 – 2GB
For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/modules
Features
• 168-pin, dual in-line memory module (DIMM)
• PC100- and PC133-compliant
• Registered inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• Utilizes 125 MHz and 133 MHz SDRAM
components
• Supports ECC error detection and correction
• 1GB (128 Meg x 72) and 2GB (256 Meg x 72)
• Single +3.3V power supply
• Fully synchronous; all signals registered on positive
edge of PLL clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal SDRAM banks for hiding row access/
precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto precharge
• Auto refresh mode
• Self refresh mode: 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Serial presence-detect (SPD)
• Gold edge contacts
Table 1:
Timing Parameters
CL = CAS (READ) latency
Module
Marking
-13E
-133
Clock
133 MHz
133 MHz
Access Time
CL = 2
5.4ns
CL = 3
5.4ns
Setup
Time
1.5
1.5
Hold
Time
0.8
0.8
Figure 1: 168-Pin DIMM (MO-161)
Standard 1.70in. (43.18mm)
Low-Profile 1.20in. (30.48mm)
Options
• Package
168-pin DIMM (standard)
168-pin DIMM (lead-free)
• Frequency/CAS Latency2
133 MHz/CL = 2
133 MHz/CL = 3
• PCB
Standard 1.70in (43.18mm)
Low-Profile 1.20in. (30.48mm)
Marking
G
Y1
-13E
-133
See note on page 2
See note on page 2
Notes: 1. Contact Micron for product availability.
2. Registered mode adds one clock cycle to CL.
Table 2: Address Table
Parameter
Refresh Count
Device Banks
Device Configuration
Row Addressing
Column Addressing
Module Ranks
1GB
8K
4 (BA0, BA1)
256Mb (64 Meg x 4)
8K (A0–A12)
2K (A0–A9, A11)
2 (S0#, S2#; S1#, S3#)
2GB
8K
4 (BA0, BA1)
512Mb (128 Meg x 4)
8K (A0–A12)
4K (A0–A9, A11, A12)
2 (S0#, S2#; S1#, S3#)
PDF: 09005aef80b1835d/Source: 09005aef80b18348
SD36C128_256x72G.fm - Rev. E 6/05 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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MT36LSDT12872 equivalent
1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM
Functional Block Diagram
Table 5:
Pin Descriptions (Continued)
Pin numbers may not correlate with symbol order; refer to Table 4 on page 3 for more information
Pin Numbers
6, 18, 26, 40, 41, 49, 59, 73, 84,
90, 102, 110, 124, 133, 143,
157, 168
1, 12, 23, 32, 43, 54, 64, 68, 78,
85, 96, 107, 116, 127, 138, 148,
152, 162
24, 25, 31, 44, 48 50, 51 61, 62,
63, 80, 81, 108, 109, 132, 134,
135, 145, 146, 164
Symbol
VDD
VSS
NC
Type
Description
Supply Power supply: +3.3V ±0.3V.
Supply Ground.
– Not connected: Listed pins are not connected on these
modules.
Functional Block Diagram
All resistor values are 10Ω unless otherwise specified.
‘t’ indicates top portion of stacked SDRAM. ‘b’ indicates bottom portion of stacked
SDRAM.
Per industry standard, Micron modules utilize various component speed grades, as ref-
erenced in the module part number guide at www.micron.com/support/number-
ing.html.
Standard modules use the following SDRAM devices: MT48LC64M4A2TG (1GB);
MT48LC128M4A2TG (2GB). Lead-free modules use the following SDRAM devices:
MT48LC64M4A2P (1GB); MT48LC128M4A2P (2GB).
PDF: 09005aef80b1835d/Source: 09005aef80b18348
SD36C128_256x72G.fm - Rev. E 6/05 EN
5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.


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MT36LSDT12872The function is 1GB Synchronous DRAM Module. MicronMicron

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