MT16HTF12864HY Datasheet PDF - Micron
Part Number | MT16HTF12864HY | |
Description | 1GB DDR2 SDRAM SODIMM | |
Manufacturers | Micron | |
Logo | ||
There is a preview and MT16HTF12864HY download ( pdf file ) link at the bottom of this page. Total 15 Pages |
Preview 1 page No Preview Available ! 1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Features
DDR2 SDRAM SODIMM
MT16HTF12864HY – 1GB
MT16HTF25664HY – 2GB
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 1GB (128 Meg x 64) or 2GB (256 Meg x 64)
• VDD = VDDQ 1.8V
• VDDSPD = 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Figure 1: 200-Pin SODIMM (MO-224 R/C E)
Module height: 30mm (1.18in)
Options
• Operating temperature
– Commercial (0°C ≤ TA ≤ +70°C)
– Industrial (–40°C ≤ TA ≤ +85°C)1
• Package
– 200-pin DIMM (lead-free)
• Frequency/CL2
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)3
Marking
None
I
Y
-80E
-800
-667
-53E
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
800
–
–
–
Data Rate (MT/s)
CL = 5
CL = 4
800 533
667 533
667 553
– 553
– 400
CL = 3
400
400
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
12.5
15
15
15
15
tRC
(ns)
55
55
55
55
55
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
|
|
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Pin Descriptions
Table 6: Pin Descriptions (Continued)
Symbol
SDA
RDQSx,
RDQS#x
Err_Out#
VDD/VDDQ
VDDSPD
VREF
VSS
NC
NF
NU
RFU
Type
I/O
Output
Output
(open drain)
Supply
Supply
Supply
Supply
–
–
–
–
Description
Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I2C bus.
Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Parity error output: Parity error found on the command and address bus.
Power supply: 1.8V ±0.1V. The component VDD and VDDQ are connected to the mod-
ule VDD.
SPD EEPROM power supply: 1.7–3.6V.
Reference voltage: VDD/2.
Ground.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functionality.
Not used: These pins are not used in specific module configurations/operations.
Reserved for future use.
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Preview 5 Page |
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Information | Total 15 Pages | |
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