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Número de pieza | WNMD2176 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | WillSEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WNMD2176 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! WNMD2176
Dual N-Channel, 20V, 2.6A, Power MOSFET
WNMD2176
www.sh-willsemi.com
VDS (V)
Typical RDS(on) (mΩ)
20 56@ VGS=4.5V
76@ VGS=2.5V
ESD Protected
Descriptions
The WNMD2176 is N-Channel enhancement
MOS Field Effect Transistor.Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge.This device is suitable for use
in DC-DC conversion,power switch and charging
circuit. Standard Product WNMD2176 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
SOT-23-6L
D1 S1 D2
6 54
1 23
G1 S2 G2
Pin configuration (Top view)
6 54
2176
NDYW
1 23
2176
ND
Y
W
= Device Code
= Special Code
= Year
=Week(A~z)
Driver for Relay, Solenoid, Motor, LED etc.
Power supply converters circui t
Load/Power Switching for portable device
Marking
Order information
Device
Package
Shipping
WNMD2176-6/TR SOT-23-6L 3000/Tape&Reel
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.0
1 page 100
10
0
F=1MHz
Ciss
Coss
Crss
5 10 15 20
VDS-Drain-Source Voltage(V)
WNMD2176
10
8
6
4
T=150OC
T=25OC
T=-50OC
2
25
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V - Source to Drain Voltage(V)
SD
Capacitance
50
TJ(Max)=150C
40 TA=25C
30
20
10
0
1E-4 1E-3 0.01 0.1 1 10
Pulse width (S)
100 1000
Single pulse power
Body diode forward voltage
10 Limit by Rdson*
100us
1 1ms
10ms
10S 100ms
0.1 1S
TA=25C
Single Pulse
DC
Bvdss Limit
0.01
0.1
1 10
VDS- Drain Source Voltage (V)
* VGS> minimum VGS at which RDS(on) is specified
100
Safe operating power
V =10V I =2.5A
DD D
4
2
0
01234
Q (nC)
g
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
Jan, 2015 - Rev.1.0
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet WNMD2176.PDF ] |
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