|
|
PDF WNM3017 Data sheet ( Hoja de datos )
| Número de pieza | WNM3017 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de WNM3017 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
WNM3017
Single N-Channel, 30V, 6.2A, Power MOSFET
VDS (V)
30
Typical RDS(on) (mΩ)
17 @ VGS=10V
Descriptions
The WNM3017 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3017 is Pb-free.
WNM3017
Http://www.sh-willsemi.com
(6)
(4) (5)
(D)
(S)
(1) (2) (3)
(1)
(2)
(3)
DFN2x2-6L
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN2x2-6L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Pin configuration (Top view)
3017
NM
Y
W
= Device Code
= Special Code
= Year
= Week(A~z)
Marking
Order information
Device
Package
Shipping
WNM3017-6/TR DFN2x2-6L 3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/03/07- Rev.1.1
1 page  
WNM3017
1500
1200
900
F=1MHz
Vgs=0V
Ciss
600
300
0
0
Crss
Coss
5 10 15
VDS -Drain to Source Voltage(V)
Capacitance
20
10
8 T=150oC
6
T=80oC
4 T=25oC
2 T=0oC
T=-50oC
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD-Source to Drain Voltage (V)
Body diode forward voltage
100
T =150oC
J(MAX)
80 T =25oC
A
60
40
20
1E-4
1E-3
0.01
0.1
1
10
Pulse width (S)
100 1000
Single pulse power
10
V =15V
8
DS
I =8A
D
6
100
Limit by Rdson
10 100us
1ms
1
10s
10ms
T =25oC
0.1 A
Single Pulse
DC
BVDSS Limit
100ms
1s
0.1 1 10 100
V -Drain to Source Voltage(V)
DS
*V >minimum V at which R is specified
GS GS DS(ON)
Safe operating power
4
2
0
0 5 10 15 20
Q (nC)
g
Gate Charge Characteristics
Will Semiconductor Ltd. 5 2016/03/07- Rev.1.1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet WNM3017.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| WNM3011 | N-Channel MOSFET |  Will Semiconductor |
| WNM3013 | N-Channel MOSFET | Will Semiconductor |
| WNM3017 | MOSFET ( Transistor ) | WillSEMI |
| WNM3018 | MOSFET ( Transistor ) | WillSEMI |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |