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What is EMD08N06E?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMD08N06E Datasheet PDF - Excelliance MOS

Part Number EMD08N06E
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMD08N06E download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMD08N06E datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
60V 
D
RDSON (MAX.) 
8mΩ 
ID 
110A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMD08N06E
LIMITS 
UNIT 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=60A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
±20 
110 
80 
380 
60 
180 
90 
166 
68 
55 to 150 
V 
A 
mJ 
W 
°C 
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=40A, Rated VDS=60V N-CH 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
0.75 
62.5 
°C / W 
2014/8/15 
p.1 

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EMD08N06E equivalent
  EMD08N06E
 
 
  10
Gate Charge Characteristics
  I D  = 20A
 8
VD  S  = 15V 30V
 
6
 
 4
 
2
 
 
0
0
 
15 30 45
Q g  ‐ Gate Charge( nC )
60
4000
3000 Ciss
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
2000
1000 Coss
Crss
0
0
15 30 45
VD  S ‐ DrainSource Voltage( V )
60
 
  103
Maximum Safe Operating Area
  RDS(ON) Limited
  102
 
  101
10μs
100μs
1ms
10ms
DC
 
100
    TC=25°C
  RθJC=0.75°C/W
  Vgs=10V
    Single Pulse
101
1 10 100
  VDS, DrainSource Voltage( V )
3000
2500
2000
1500
1000
500
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC    J= C = 2 05. °7C5 °C/W
0.1 1 10 100
Single Pulse Time( sec ) 
1000
 
 
100
  D=0.5
Transient Thermal Response Curve
 
0.2
  0.1
101
  0.05
Note :
  1. RθJC(t)=0.75°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
  0.02
0.01
  102
single pulse
PDM
t1
t2
 
  105 104 103 102 101 100
t1,Time( sec )
 
101
 
 
 
2014/8/15 
p.5 


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Part Details

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