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What is EMC09N08E?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMC09N08E Datasheet PDF - Excelliance MOS

Part Number EMC09N08E
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMC09N08E download ( pdf file ) link at the bottom of this page.





Total 6 Pages



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No Preview Available ! EMC09N08E datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
75V 
D
RDSON (MAX.) 
9mΩ 
ID 
103A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.3mH, ID=60A, RG=25Ω 
L = 0.1mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2015/5/25 
EMC09N08E
LIMITS 
±30 
103 
80 
200 
68 
540 
180 
223 
89 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
0.56 
60 
UNIT 
°C / W 
p.1 

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EMC09N08E equivalent
 
 
Gate Charge Characteristics
  10
I D  = 30A
 
8
VD  S  = 20V 40V
 
 6
 
4
 
 2
 0
 0
15 30 45
Q g  ‐ Gate Charge( nC )
60
  EMC09N08E
4000
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
3000
Ciss
2000
1000
Coss
Crss
0
0 20 40 60
VD  S ‐ DrainSource Voltage( V )
80
 
  103
Maximum Safe Operating Area
  RDS(ON) Limited
  102
 
  101
10μs
100μs
1ms
10ms
DC
 
100
    TC=25°C
  RθJC=0.56°C/W
  Vgs=10V
    Single Pulse
101
100 101
102
  VDS, DrainSource Voltage( V )
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθ C   J= C = 2 05°. 5C6° C/W
0.1 1 10 100
Single Pulse Time( sec ) 
1000
  Transient Thermal Response Curve
  100
  D=0.5
  0.2
  0.1
101
  0.05
0.02
 
0.01
  102
single pulse
Note :
  1. RθJC(t)=0.56°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
 
  105 104 103 102 101 100
t1,Time( sec )
 
101
 
 
 
 
 
2015/5/25 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMC09N08E electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMC09N08EThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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