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Número de pieza | EMDA2N20F | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMDA2N20F (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
120mΩ
ID 18A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 1mH, ID=11A, RG=25Ω
L = 0.5mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/12/20
EMDA2N20F
LIMITS
±30
18
12
60
11
60.5
30.2
35
14
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.5
65
UNIT
°C / W
p.1
1 page EMDA2N20F
10
Gate Charge Characteristics
I D =10.5A
8
6
VD S = 50V
100V
4
2
4000
3000
2000
Capacitance Characteristics
Ciss
f = 1MHz
VG S = 0 V
1000
Coss
0
0
10 20 30
Q g ‐ Gate Charge( nC )
40
100
Maximum Safe Operating Area
R D S (O N )Limit
10
100μs
1ms
10ms
100ms
1
1s
DC
VG S = 10V
Single Pulse
R JC = 3.5°C/W
0.1 TC = 25°C
1 10
100 1000
VD S ‐ Drain‐Source Voltage( V )
0 Crss
0
3000
2500
2000
1500
1000
500
0 0.01
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
RSTiθC n J= Cg = l2e 35 P°. 5Cu °Cls/eW
0.1 1 10 100
Single Pulse Time( sec )
1000
100
D=0.5
Transient Thermal Response Curve
0.2
10‐1 0.1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=3.5°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2013/12/20
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMDA2N20F.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMDA2N20F | Field Effect Transistor | Excelliance MOS |
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