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What is EMD04N60CSB?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMD04N60CSB Datasheet PDF - Excelliance MOS

Part Number EMD04N60CSB
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 6 Pages



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No Preview Available ! EMD04N60CSB datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
600V 
D
RDSON (MAX.) 
2.4Ω 
ID  4A 
G
 
UIS, 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 3mH, ID=4A, RG=25Ω 
L = 0.5mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2015/3/25 
EMD04N60CSB
LIMITS 
±30 
4 
3.2 
16 
4 
24 
4 
30 
12 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
4.2 
110 
UNIT 
°C / W 
p.1 

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EMD04N60CSB equivalent
 
 
 
 
 
  G a te C h a rg e C h a ra c te ris tic s
12
ID = 2 A
 
10
 
 8
V DS =150V
300V
 6
1000
100
C a p a c ita n c e  C h a ra c te ristic s
C is s
C o ss
 4
 
2
 
0
  04
8 12
Q g ,G a te C h a rg e ( n C )
 
  Maximum Safe Operating Area
100
10
C rss
f =  1  M H z
V G S= 0  V
1
0 5 10 15 20
V DS ‐D ra in S o u rc e  V o lta g e ( V  )
25
 
 
 
 
 
 
10
R D  S ( O N ) L im it
1
0.1
  VG S  = 10V
Single Pulse
R  JC  = 4.2°C/W
  TC   = 25°C
10μs
100μs
1ms
10ms
100ms
1s
DC
  0.01
1
 
10 100 1000
VD S   ‐ DrainSource Voltage( V )
10000
 
 1
Duty Cycle = 0.5
 
0.2
  0.1
0.1
  0.05
0.02
  0.01
0.01
  Single Pulse
 
0.001
  105
104
 
Transient Thermal Response Curve
103 102
t 1 ,Time (sec)
101
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.Rθ  J C  = 4.2°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J C (t)=r(t) * RθJC
1 10
 
 
 
 
100
2015/3/25 
EMD04N60CSB
30
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMD04N60CSB electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMD04N60CSThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMD04N60CSBThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMD04N60CSKThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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