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PDF EMF14N02A Data sheet ( Hoja de datos )
| Número de pieza | EMF14N02A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
13.5mΩ
ID 48A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
375°C / W when mounted on a 1 in2 pad of 2 oz copper.
2014/11/25
EMF14N02A
LIMITS
±12
48
20
140
33
54
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNIT
°C / W
p.1
1 page  
Gate‐Charge Characteristics
5
ID = 18A
4
3
2
VDS= 5V
10V
1
0
0 3 6 9 12 15 18 21
Qg, Gate Charge ( nC )
2400
2000
1600
1200
800
400
0
0
EMF14N02A
Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
5 10 15
VDS, Drain‐Source Voltage( V )
20
300
100 R d s ( o n ) Limit
10
Maximum Safe Operating Area
10μ s
100μ s
1ms
D10C100mms s
1
VG S = 10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25° C
0.5
0.5 1
10
VD S ,Drain‐Source Voltage( V )
50
300
250
200
150
100
50
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ J C = 2.5° C/W
TC = 25° C
0.1 1 10
Single Pulse Time( mSEC )
100
1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2 10‐1
Notes:
DM
1 10
t 1 ,T im e (m S E C )
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 2.5°C/W
3.TJ ‐ TC = P * R θ J C (t)
4.Rθ J C (t)=r(t) * RθJC
100
1000
2014/11/25
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMF14N02A.PDF ] | |
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