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Número de pieza | EMD98N10A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMD98N10A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
100mΩ
ID 16A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2014/7/30
EMD98N10A
LIMITS
±25
16
10.6
45
12
7.2
3.6
39
15
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3.2
75
UNIT
°C / W
p.1
1 page 10
I D = 8A
8
Gate Charge Characteristics
VD S = 50V
80V
6
4
2
0
0
3 69
Q g ‐ Gate Charge( nC )
EMD98N10A
1000
900
800
Capacitance Characteristics
f = 1M Hz
V G S = 0 V
700
600
500 Ciss
400
300
Coss
200
100
Crss
12
0
0 20 40 60 80 100
VD S ‐ D rain‐Source V oltage( V )
M a x im u m S a fe O p e ra tin g A re a
100
R D S ( O N )L im it
10
10uS
100uS
1mS
D
1
C
0
10m
0mS
S
1
0 .1
V G S = 1 0 V
S in g le P u lse
R JC = 3 . 2 ° C / W
0.01
T C = 2 5 ° C
1 10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
1000
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
SRθi n J Cg =le 3 P.2u °Cls/eW
TC = 25° C
0.1 1
10
Single Pulse Time( sec )
100
1000
100
D=0.5
Transient Thermal Response Curve
0.2
10‐1 0.1
0.05
0.02
0.01
single pulse
10‐2
※Note :
1. RθJC(t)=3.2°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2014/7/30
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMD98N10A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMD98N10A | Field Effect Transistor | Excelliance MOS |
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