DataSheet39.com

What is EMB12N10A?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB12N10A Datasheet PDF - Excelliance MOS

Part Number EMB12N10A
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB12N10A download ( pdf file ) link at the bottom of this page.





Total 6 Pages



Preview 1 page

No Preview Available ! EMB12N10A datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
100V 
D
RDSON (MAX.) 
12mΩ 
ID  68A  G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=18A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2017/3/15 
EMB12N10A
LIMITS 
±20 
68 
43 
150 
18 
16.2 
8.1 
89 
35 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
1.4 
62.5 
UNIT 
°C / W 
p.1 

line_dark_gray
EMB12N10A equivalent
  EMB12N10A
 
 
 
  Gate Charge Characteristics
  10
I D  = 12A
 8
 
6
 
VD  S   = 25V
50V
 4
 
2
 
 0
0 10 20 30 40
Q g  ‐ Gate Charge( nC )
 
4000
3000
Ciss
2000
Coss
1000
Crss
0
0
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
25 50 75
VD  S ‐ DrainSource Voltage( V )
100
  Maximum Safe Operating Area
  103
   102 RDS(ON) Limited
10μs
 
101
 
100μs
1ms
10ms
  100
DC
  TC=25°C
    RθJC=1.4°C/W
  Vgs=10V
  Single Pulse
  101
100
101 102
VDS, DrainSource Voltage( V )
 
600
500
400
300
200
100
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC    J= C = 2 15°. 4C° C/W
0.1 1 10 100
Single Pulse Time( sec ) 
1000
  Transient Thermal Response Curve
  100
  D=0.5
  0.2
  101 0.1
  0.05
  0.02
0.01
single pulse
  102
Note :
  1. RθJC(t)=1.4°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
  105 104 103 102 101 100 101
  t1,Time( sec )
 
 
 
 
2017/3/15 
p.5 


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB12N10A electronic component.


Information Total 6 Pages
Link URL [ Copy URL to Clipboard ]
Download [ EMB12N10A.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
EMB12N10AThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMB12N10CSThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMB12N10GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

EMB1     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search