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PDF EMB06N06A Data sheet ( Hoja de datos )
| Número de pieza | EMB06N06A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB06N06A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
5.2mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06N06A
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1,3
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=75A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
80
50
170
75
281
140
56
22
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=50A, Rated VDS=60V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
3Pulsed drain current rating is package limited.
2.2
°C / W
50
2016/4/22
p.1
1 page  
10
Gate Charge Characteristics
I D = 30A
8
VD S = 15V
30V
6
4
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
EMB06N06A
6000
4500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
3000
1500
0
0
Coss
Crss
15 30 45
VD S ‐ Drain‐Source Voltage( V )
60
1000
M a x im u m S a fe O p e ra tin g A re a
100
R d s( o n ) L im it
10
1 0μ s
1m s 100 μ s
D
10
C
10m
0ms
s
1 V G S = 1 0 V
S IN G LE P U LS E
R θ J C = 2 . 2 °C / W
T c = 2 5 °C
0 .1
0 .1 1
10
V D S , D r a i n ‐ S o u r c e V o lt a g e ( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
RSTθIC N J= C G= 2 L25E°. 2CP° UC/LWSE
2500
2000
1500
1000
500
0
0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1
Duty Cycle = 0.5
0.5
Transient Therm al Response Curve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
1 0‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1 .D u ty C y c le ,D =
t1
t2
2 .Rθ J C = 2 .2 °C /W
3 .TJ ‐ TC = P * Rθ J C (t)
4 .Rθ J C (t)= r(t) * RθJC
100
1000
2016/4/22
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB06N06A.PDF ] | |
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