|
|
PDF EMB14N10CS Data sheet ( Hoja de datos )
| Número de pieza | EMB14N10CS | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMB14N10CS (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
14.6mΩ
ID 62A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB14N10CS
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=70A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
62
39
240
60
245
122
89
35
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=50V, L=0.1mH, VG=10V, IL=40A, Rated VDS=100V N-CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
1.4
°C / W
50
2016/1/22
p.1
1 page  
EMB14N10CS
Gate Charge Characteristics
10
I D = 20A
8
VD S = 25V
50V
6
4
2
0
0
20 40 60
Q g ‐ Gate Charge( nC )
80
6000
4500
Ciss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
3000
1500
0
0
Coss
Crss
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
Maximum Safe Operating Area
103
RDS(ON) Limited
102
101
10μs
100μs
1ms
10ms
DC
100
TC=25°C
RθJC=1.4°C/W
Vgs=10V
Single Pulse
10‐1
100
101 102
VDS, Drain‐Source Voltage( V )
600
500
400
300
200
100
0 0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC J= C = 2 15°. 4C° C/W
0.1 1 10 100
Single Pulse Time( sec )
1000
100
D=0.5
Transient Thermal Response Curve
0.2
10‐1 0.1
0.05
0.02
0.01
10‐2
single pulse
※Note :
1. RθJC(t)=1.4°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2016/1/22
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB14N10CS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMB14N10CS | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |