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PDF EMB12N10CS Data sheet ( Hoja de datos )
| Número de pieza | EMB12N10CS | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
12mΩ
ID 68A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=18A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2017/2/22
EMB12N10CS
LIMITS
±20
68
43
150
18
16.2
8.1
89
35
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
1.4
62.5
UNIT
°C / W
p.1
1 page  
EMB12N10CS
Gate Charge Characteristics
10
I D = 12A
8
6
VD S = 25V
50V
4
2
0
0 10 20 30 40
Q g ‐ Gate Charge( nC )
4000
3000
Ciss
2000
Coss
1000
Crss
0
0
Capacitance Characteristics
f = 1MHz
VG S = 0 V
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
Maximum Safe Operating Area
103
102 RDS(ON) Limited
10μs
101
100μs
1ms
10ms
100
DC
TC=25°C
RθJC=1.4°C/W
Vgs=10V
Single Pulse
10‐1
100
101 102
VDS, Drain‐Source Voltage( V )
600
500
400
300
200
100
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC J= C = 2 15°. 4C° C/W
0.1 1 10 100
Single Pulse Time( sec )
1000
Transient Thermal Response Curve
100
D=0.5
0.2
10‐1 0.1
0.05
0.02
0.01
single pulse
10‐2
※Note :
1. RθJC(t)=1.4°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐5 10‐4 10‐3 10‐2 10‐1 100 101
t1,Time( sec )
2017/2/22
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB12N10CS.PDF ] | |
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