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What is EMDE0N20F?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMDE0N20F Datasheet PDF - Excelliance MOS

Part Number EMDE0N20F
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 5 Pages



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No Preview Available ! EMDE0N20F datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
200V 
D
RDSON (MAX.) 
0.5Ω 
ID  7A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 1mH, ID=1.5A, RG=25Ω 
L = 0.5mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2015/10/12 
EMDE0N20F
LIMITS 
±30 
7 
4.5 
28 
1.5 
1.12 
0.56 
44 
17 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
2.8 
65 
UNIT 
°C / W 
p.1 

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EMDE0N20F equivalent
  EMDE0N20F
 
 
 
  10
Gate Charge Characteristics
  I D  = 3.5A
 8
 6
VD  S   = 50V
100V
 
4
 
 2
 
0
 0
 
100
 
5 10 15 20
Q g  ‐ Gate Charge( nC )
M axim u m  Safe O p eratin g A rea
25
 
  10 R D  S (O  N )Limit
 
100μs
1ms
10ms
100ms
 
1
1s
DC
 
  VG  S = 10V
    Single Pulse
  R  JC  = 2.5°C/W
  0.1   TC   = 25°C
1
10
100 1000
VD  S  ‐ D r a in S o u rc e  V o lt a g e ( V  )
 
1200
900
Ciss
600
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
300
Coss
Crss
0
0
50 100 150
VD  S ‐ DrainSource Voltage( V )
Single Pulse Maximum Power Dissipation
100
Single Pulse
Rθ  J C= 2.5°C/W
80 TC  = 25°C
200
60
40
20
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
  Transient Thermal Response Curve
  100
  D=0.5
 
0.2
  0.1
  101
0.05
  0.02
  0.01
  102
single pulse
Note :
  1. RθJC(t)=2.5°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
 
  105 104 103 102 101 100 101
t1,Time( sec )
 
 
 
 
2015/10/12 
p.5 


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EMDE0N20AThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
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