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EMD04N06FN Datasheet PDF - Excelliance MOS

Part Number EMD04N06FN
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 



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EMD04N06FN datasheet, circuit
 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
60V 
D
RDSON (MAX.) 
5mΩ 
ID  75A  G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMD04N06FN
LIMITS 
UNIT 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=70A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
±20 
75 
45 
160 
70 
245 
122 
50 
20 
55 to 150 
V 
A 
mJ 
W 
°C 
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=40A, Rated VDS=60V N-CH 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2.5 
°C / W 
65 
2017/3/7 
p.1 

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EMD04N06FN equivalent
 
 
Gate Charge Characteristics
  10
I D  = 20A
 8
VD  S = 15V 30V
 
 6
 4
  EMD04N06FN
8000
6000
4000
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
Ciss
 
2
 
 0
0
 
20 40 60
Q g  ‐ Gate Charge( nC )
80
2000
0
0
Coss
Crss
15 30 45
VD  S ‐ DrainSource Voltage( V )
60
 
 
  1000
M a x im u m  S a fe  O p e ra tin g  A re a
   1 0 0
R  d  s (o n ) L im it
  10
 
1 0  μ s
1 0 0   μs
D
1
C
0
01m0sm1 ms s
  1 V G  S  =  1 0 V
  SIN G LE  P U LSE
R θ   J C  =   2 . 5  °C / W
T c  =   2 5  °C
  0.1
0 .1
1
10
V D  S  , D r a i n ‐   S o u r c e   V o l t a g e (   V   )
 
100
600
500
400
300
200
100
0 0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC    J= C = 2 25°. 5C° C/W
0.1 1 10 100
Single Pulse Time( sec ) 
1000
 
 
100
  D=0.5
Transient Thermal Response Curve
  0.2
  101 0.1
  0.05
  0.02
0.01
single pulse
  102
Note :
  1. RθJC(t)=2.5°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
  105 104 103 102 101 100 101
t1,Time( sec )
 
 
 
 
 
2017/3/7 
p.5 

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