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What is EMC08N08E?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMC08N08E Datasheet PDF - Excelliance MOS

Part Number EMC08N08E
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMC08N08E download ( pdf file ) link at the bottom of this page.





Total 6 Pages



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No Preview Available ! EMC08N08E datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
75V 
D
RDSON (MAX.) 
8mΩ 
ID 
118A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMC08N08E
LIMITS 
UNIT 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=85A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
±30 
118 
92 
350 
85 
361 
180 
227 
90 
55 to 150 
V 
A 
mJ 
W 
°C 
100% UIS testing in condition of VD=38V, L=0.1mH, VG=10V, IL=55A, Rated VDS=75V N-CH 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
0.55 
60 
°C / W 
2015/10/8 
p.1 

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EMC08N08E equivalent
 
 
  10
Gate Charge Characteristics
  I D  = 35A
8
 
VD  S = 20V
40V
  EMC08N08E
4000
3000
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
 6
 
4
 
 2
2000
Ciss
1000
Coss
 0
0 10 20 30 40
  Q g  ‐ Gate Charge( nC )
Crss
0
0 20 40 60
VD  S ‐ DrainSource Voltage( V )
80
 
  103
Maximum Safe Operating Area
  RDS(ON) Limited
  102
10μs
100μs
 
  101
1ms
10ms
DC
  100
    TC=25°C
  RθJC=0.55°C/W
  Vgs=10V
  Single Pulse
  101
100
 
VDS, Dra10in1 Source Voltage( V ) 102
  Transient Thermal Response Curve
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ  JC  = 0.55° C/W
TC  = 25° C
0.1 1
10 100
Single Pulse Time( sec ) 
1000
  100
  D=0.5
  0.2
  0.1
101
0.05
  0.02
  0.01
single pulse
  102
Note :
  1. RθJC(t)=0.55°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
  105 104 103 102 101 100 101
t1,Time( sec )
 
 
 
 
 
 
 
2015/10/8 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMC08N08E electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMC08N08EThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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