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PDF SQJQ480E Data sheet ( Hoja de datos )

Número de pieza SQJQ480E
Descripción Automotive Dual N-Channel MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo



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SQJQ480E
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
Package
80
0.003
150
Single
PowerPAK 8 x 8L
PowerPAK® 8 x 8L Single
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Fully lead (Pb)-free device
• Thin 1.9 mm height
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
D
1
Top View
8.1 mm
1
2G
3S
4S
S
Bottom View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode conduction)
Pulsed Drain Current a
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) c, d
TJ, Tstg
LIMIT
80
± 20
150
87
124
210
53
140
136
45
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount b
RthJA
50
°C/W
RthJC
1.1
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1373-Rev. A, 11-Jul-16
1
Document Number: 76718
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQJQ480E pdf
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1000
Axis Title
IDM limited
10000
100
10
Limited by RDS(on) (1)
1
100 μs
1000
1 ms
10 ms
100 ms, 1 s,
10 s, DC
100
0.1
TC = 25 °C
Single pulse
BVDSS limited
0.01 10
0.01 0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
SQJQ480E
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single pulse
0.001
0.01
0.1 1
Square Wave Pulse Duration (s)
2nd line
Notes:
PDM
1000
t1
t2
1. Duty cycle, D =
t1
t2
2. Per unit base = RthJA = 180 °C/W
100
3. TJM - TA = PDMZthJA (t)
4. Surface mounted
10
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S16-1373-Rev. A, 11-Jul-16
5
Document Number: 76718
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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