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What is EMD02N06E?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMD02N06E Datasheet PDF - Excelliance MOS

Part Number EMD02N06E
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMD02N06E download ( pdf file ) link at the bottom of this page.





Total 6 Pages



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No Preview Available ! EMD02N06E datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
60V 
D
RDSON (MAX.) 
3.1mΩ 
ID 
191A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMD02N06E
LIMITS 
UNIT 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=90A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
±30 
191 
134 
540 
90 
405 
202 
277 
111 
55 to 150 
V 
A 
mJ 
W 
°C 
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=60A, Rated VDS=60V N-CH 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
0.45 
62.5 
°C / W 
2015/9/30 
p.1 

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EMD02N06E equivalent
 
 
Gate Charge Characteristics
  10
I D  = 20A
VD  S = 15V
 8
30V
 
 6
 4
  EMD02N06E
10000
7500
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
Ciss
5000
 
2
 
 0
0 30 60 90 120
  Q g  ‐ Gate Charge( nC )
2500
0
0
Coss
Crss
15 30 45
VD  S ‐ DrainSource Voltage( V )
60
  Maximum Safe Operating Area
  103
RDS(ON) Limited
 
  102
10μs
100μs
1ms
  101
 
10ms
DC
  100
  TC=25°C
    RθJC=0.45°C/W
  Vgs=10V
  Single Pulse
  101
100
101 102
VDS, DrainSource Voltage( V )
 
Single Pulse Maximum Power Dissipation
3000
Single Pulse
Rθ  JC  = 0.45 °C/W
TC  = 25 °C
2500
2000
1500
1000
500
0
0.01
0.1 1 10
Single Pulse Time( sec ) 
100
1000
  Transient Thermal Response Curve
 
100
  D=0.5
  0.2
  0.1
101
0.05
 
0.02
  0.01
  102
single pulse
Note :
  1. RθJC(t)=0.45°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
  105 104 103 102 101 100 101
  t1,Time( sec )
 
 
 
 
 
 
2015/9/30 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMD02N06E electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMD02N06EThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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