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What is EMB32N03P?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB32N03P Datasheet PDF - Excelliance MOS

Part Number EMB32N03P
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 5 Pages



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No Preview Available ! EMB32N03P datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
RDSON (MAX.) 
30V 
35mΩ 
D
ID  5.5A  G
 
 S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 70 °C 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
385°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
 
 
2014/3/20 
EMB32N03P
LIMITS 
±20 
5.5 
3.6 
24 
1.47 
0.94 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
18 
85 
UNIT 
°C / W 
p.1 

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EMB32N03P equivalent
  EMB32N03P
 
 
 
  10
Gate Charge Characteristics
I D  = 5.5A
 
8
 
VD  S   = 5V
10V
 6
15V
 
4
 
 2
 
0
 0
 
100
 
36
Q  g ‐ Gate Charge( nC )
9
Maximum Safe Operating Area
12
   10 R D S  (O  N  ) Limit
100μs
1ms
10ms
 1
 
100ms
1s
10s
DC
  0.1
  VG  S = 10V
Single Pulse
R  J A  = 85°C/W
    T A  = 25°C
0.01
  0.1
1 10
VD  S  ‐ DrainSource Voltage( V )
 
100
1000
900
800
700
600
500
400
300
200
100
0
0
50
40
Capacitance Characteristics
f  =  1MHz
V G S  = 0 V
Ciss
Coss
Crss
5 10 15 20
VD  S ‐ DrainSource Voltage( V )
25
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ  J A = 85° C/W
TA  = 25° C
30
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
 
 1
Duty Cycle = 0.5
  0.2
  0.1
0.1
Transient Thermal Response Curve
  0.05
  0.02
0.01
  0.01
Single Pulse
 
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.Rθ  J  A =85°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
0.001
104 103 102 101 1 10 100
1000
t 1 ,Time (sec)
2014/3/20 
p.5 


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Part Details

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Information Total 5 Pages
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