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PDF EMB12N10G Data sheet ( Hoja de datos )
| Número de pieza | EMB12N10G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
12mΩ
ID 12A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
3The maximum current rating is package limited.
2017/3/15
EMB12N10G
LIMITS
±20
12
7.3
48
12
7.2
3.6
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page  
EMB12N10G
Gate Charge Characteristics
10
I D = 12A
8
VD S = 25V
50V
6
4
2
4000
3000
Ciss
2000
Coss
1000
Crss
Capacitance Characteristics
f = 1MHz
VG S = 0 V
0
0
10 20 30
Q g ‐ Gate Charge( nC )
40
0
0 25 50 75 100
VD S ‐ Drain‐Source Voltage( V )
Maximum Safe Operating Area
100
R D S ( O N )Limit
10
100μs
1ms
10ms
1
100ms
1s
DC
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
0.1
VG S = 10V
Single Pulse
R JA = 50°C/W
0.01 TA = 25°C
0.1 1 10 100
VD S ‐ D ra in ‐S o u r c e V o lt a g e ( V )
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
Transient Thermal Response Curve
10
0
0.001
0.01
0.1 1 10
t 1 ,Time ( sec )
100 1000
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2017/3/15
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB12N10G.PDF ] | |
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