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EMD12N10H Datasheet PDF - Excelliance MOS

Part Number EMD12N10H
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 



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EMD12N10H datasheet, circuit
 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
100V 
D
RDSON (MAX.) 
12mΩ 
ID  50A  G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=50A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2015/12/9 
EMD12N10H
LIMITS 
±30 
50 
31 
150 
50 
125 
62.5 
50 
20 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
2.5 
62 
UNIT 
°C / W 
p.1 

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EMD12N10H equivalent
  EMD12N10H
 
 
 
10
Gate Charge Characteristics
  I D  = 24A
VD  S = 25V
 8
50V
 
6
 
 4
 2
 
 
0
0
 
10 20 30
Q g  ‐ Gate Charge( nC )
40
4000
3000
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
Ciss
2000
1000
Coss
Crss
0
0 25 50 75
VD S  ‐ DrainSource Voltage( V )
100
 
  103
   102 RDS(ON) Limited
10μs
  100μs
  101
1ms
10ms
  100
DC
    TC=25°C
  RθJC=2.5°C/W
  Vgs=10V
  Single Pulse
  101
100
101
  DS
102
1200
1000
800
600
400
200
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ  J C = 2.5° C/W
TC  = 25° C
0.1 1
10 100
Single Pulse Time( mSEC ) 
1000
 
1
Transient Thermal Response Curve
  Duty Cycle = 0.5
  0.5
  0.3
0.2 0.2
 
  0.1 0.1
0.05
  0.05
0.02
  0.03
0.01
  0.02
Single Pulse
  0.01
102
101
 
Notes:
DM
1 10
t 1 ,Time (mSEC)
1.Duty Cycle,D =
t1
t2
2.Rθ  J C  = 2.5°C/W
3.TJ  ‐  T C  = P * Rθ  J C  (t)
4.Rθ  J C (t)=r(t) * RθJC
100
1000
 
 
 
 
2015/12/9 
p.5 

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Information Total 6 Pages
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