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EMD12N06H Datasheet PDF - Excelliance MOS

Part Number EMD12N06H
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 



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EMD12N06H datasheet, circuit
 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
60V 
D
RDSON (MAX.) 
12mΩ 
ID  48A  G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMD12N06H
LIMITS 
UNIT 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1,3 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=40A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
±20 
48 
28 
150 
40 
80 
40 
50 
20 
55 to 150 
V 
A 
mJ 
W 
°C 
100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=30A, Rated VDS=60V N-CH 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
3Pulsed drain current rating is package limited. 
  
 
 
2.5 
°C / W 
75 
2015/7/10 
p.1 

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EMD12N06H equivalent
 
 
  10
Gate Charge Characteristics
  I D  = 20A
 8
VD  S  = 15V 30V
  EMD12N06H
2000
1500
Ciss
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
 6
 
 4
 2
 
 
0
0
 
1000
7 14 21
Q g  ‐ Gate Charge( nC )
28
Coss
500
Crss
0
0 15 30 45
VD  S ‐ DrainSource Voltage( V )
60
 
1000
 
M a x im u m  S a fe  O p e ra tin g  A re a
 
100
  R  d  s( o n ) L im it
  10
 
1 0  μ s
1m s 100  μs
D
1
C
10m
00ms
s
  1 V G  S  =   1 0 V
  SIN G LE  P U LSE
R θ   J C  =   2 . 5  °C / W
  T c  =   2 5  °C
0 .1
0 .1 1
10
  V D   S  , D r a in ‐   S o u r c e   V o lt a g e (   V   )
100
3000
2500
2000
1500
1000
500
0 0.01
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ  J C = 2.5° C/W
TC  = 25° C
0.1 1 10 100
Single Pulse Time(SEC) 
1000
 
 1
T ra n sie n t T h e rm a l R e spo n se  C urve
  Duty Cycle = 0.5
0.5
  0.3
  0.2 0.2
  0.1 0.1
0.05
  0.05
0.02
  0.03
0.01
0.02
  0.01
Single Pulse
  102
1 01
 
Notes:
DM
1 10
t 1 ,Tim e (sec)
1.Duty Cycle,D =
t1
t2
2 .R θ   J C   = 2 .5 ° C / W
3.TJ  ‐  T C  =  P * R  θ J C  (t)
4 .Rθ  J C (t)=r(t) * RθJC
100
1000
 
 
2015/7/10 
p.5 

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Information Total 6 Pages
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