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PDF EMB12N10VS Data sheet ( Hoja de datos )
| Número de pieza | EMB12N10VS | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
12mΩ
ID 32A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
TC = 25 °C
TA = 25 °C
Pulsed Drain Current1
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=21A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2017/3/6
EMB12N10VS
LIMITS
±20
32
12
9
96
20
22
11
21
8.3
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
W
°C
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page  
EMB12N10VS
Gate Charge Characteristics
10
I D = 12A
8
6
4
VD S = 25V
50V
2
0
0 10 20 30 40
Q g ‐ Gate Charge( nC )
4000
3000
Ciss
2000
Coss
1000
Crss
0
0
Capacitance Characteristics
f = 1MHz
VG S = 0 V
25 50 75
VD S ‐ Drain‐Source Voltage( V )
100
Maximum Safe Operating Area
100
R D S (O N )Limit
100μs
1ms
10
10ms
1
100ms
1s
DC
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
0.1
VG S = 10V
Single Pulse
R JA = 50°C/W
0.01 TA = 25°C
0.1
1 10 100
VD S ‐ Drain‐Source Voltage( V )
1000
10
0
0.001
0.01
0.1 1
t 1 ,Time ( sec )
10
100 1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
Transient Thermal Response Curve
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10‐3
10 ‐2
10‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2017/3/6
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB12N10VS.PDF ] | |
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