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EMB16N06V Datasheet PDF - Excelliance MOS

Part Number EMB16N06V
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 



Preview ( 5 pages )
		
EMB16N06V datasheet, circuit
 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
60V 
D
RDSON (MAX.) 
16mΩ 
ID  15A  G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=15A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2015/7/13 
EMB16N06V
LIMITS 
±20 
15 
11 
60 
15 
11.25 
5.62 
2.5 
1 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
6 
50 
UNIT 
°C / W 
p.1 

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EMB16N06V equivalent
  EMB16N06V
 
 
 
Gate Charge Characteristics
  10
I D  = 10A
 8
  VD  S   = 15V 30V
 6
 4
 
 2
 0
0
 
  100
15 30 45
Q g  ‐ Gate Charge( nC )
Maximum Safe Operating Area
60
 
  10 R D S  (O  N  ) Limit
 
100μs
1ms
10ms
100ms
 1
1s
  0.1
VG  S = 10V
Single Pulse
  R  J  A = 50°C/W
TA   = 25°C
 
0.01
10s
DC
  0.1
1 10
VD  S  ‐ DrainSource Voltage( V )
100
 
4000
3000
2000
Ciss
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
1000
0
0
50
40
Coss
Crss
10 20 30
VD  S ‐ DrainSource Voltage( V )
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ  J A = 50°C/W
TA  = 25°C
30
40
20
10
0
0.001
0.01 0.1
1
10 100 1000
 
 
1
  Duty Cycle = 0.5
Transient Thermal Response Curve
  0.2
0.1
  0.1
0.05
  0.02
0.01
  0.01
Single Pulse
 
  0.001
10 4
10 3
10 2
101
1
  t 1 ,Time (sec)
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ  J  A = 50°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
10 100
1000
 
 
 
 
 
2015/7/13 
p.5 

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