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What is EMB32N03VAT?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB32N03VAT Datasheet PDF - Excelliance MOS

Part Number EMB32N03VAT
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 5 Pages



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No Preview Available ! EMB32N03VAT datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
35mΩ 
ID  5.5A 
 
UIS, Rg 100% Tested 
G
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
Bottom View
S DD
SD
 G D D
PIN 1
SYMBOL 
EMB32N03VAT
LIMITS 
UNIT 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 70 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=6A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
±20 
5.5 
3.6 
22 
6 
1.8 
0.9 
2.08 
1.33 
55 to 150 
V 
A 
mJ 
W 
°C 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
360°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
2015/7/22 
TYPICAL 
 
 
MAXIMUM 
12 
60 
UNIT 
°C / W 
p.1 

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EMB32N03VAT equivalent
 
 
Gate Charge Characteristics
  10
I D  = 5.5A
 
8
 
VD  S   = 5V
10V
 6
15V
 4
 
 2
 0
0
 
36
Q  g ‐ Gate Charge( nC )
9
12
  EMB32N03VAT
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f  =  1MHz
V G S  = 0 V
Ciss
Coss
Crss
5 10 15 20
VD  S ‐ DrainSource Voltage( V )
25
30
 
 
100
 
Maximum Safe Operating Area
   10 R D S  (O  N  ) Limit
100μs
1ms
10ms
 1
 
100ms
1s
10s
DC
  0.1
  VG  S = 10V
Single Pulse
R  J  A = 60°C/W
    T A  = 25°C
  0.01
0.1
 
1 10
VD  S  ‐ DrainSource Voltage( V )
100
600
500
Sin gle  P u lse  M a xim u m  P o w e r D issip a tio n
Sin g le  P u lse
Rθ  J A =  6 0 ° C / W
T A    =   2 5 ° C
400
300
200
100
0
0 .00 00 1 0.0 00 1
0.0 01
0 .01
t  1 , T im e  (  s e c  )
0 .1
1
 
 
1
  Duty Cycle = 0.5
  0.2
  0.1
0.1
  0.05
  0.02
0.01
  0.01
 
Single Pulse
 
0.001
  10 5
104
 
Transient Thermal Response Curve
103
10 2
101
t 1 ,Time (sec)
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ  J  A = 60°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
1 10
100
2015/7/22 
p.5 


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Part Details

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Information Total 5 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMB32N03VATThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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