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What is EMF20N02VAT?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMF20N02VAT Datasheet PDF - Excelliance MOS

Part Number EMF20N02VAT
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMF20N02VAT download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMF20N02VAT datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
20V 
D
RDSON (MAX.) 
20mΩ 
ID  7A 
G
 
 S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
Bottom View
S DD
SD
GD D
PIN 1
SYMBOL 
EMF20N02VAT
LIMITS 
UNIT 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 70 °C 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
±12 
7 
5.5 
28 
2.08 
1.33 
55 to 150 
V 
A 
W 
°C 
MAXIMUM 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
360°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
 
 
12 
°C / W 
60 
2015/8/31 
p.1 

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EMF20N02VAT equivalent
 
 
 5
ID = 6A
 
4
 
 3
 GateCharge Characteristics
VDS= 5V
10V
 
2
 
 1
 
0
 
0 2 4 6 8 10 12 14
Qg, Gate Charge ( nC )
 
 
900
750
600
450
300
150
0
0
EMF20N02VAT
 Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
5 10 15
VDS, DrainSource Voltage( V )
20
 
100
M aximum Safe Operating Area
   10 R D  S ( O N  ) Limit
10μs
100μs
  1ms
 1
10ms
100ms
1s
  DC
  0.1
    VG  S =   1 0 V
Single Pulse
R   J A  =  6 0 ° C / W
    T  A   =  2 5 ° C
 
0.01
  0.1
1 10
VD  S  ‐ D r a in S o u r c e  V o lt a g e ( V  )
100
600
500
S in g le  P u ls e  M a x im u m  P o w e r D is s ip a tio n
S in g le  P u ls e
R θ   J A  =   6 0 ° C / W
T A    =   2 5 ° C
400
300
200
100
0
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
t  1  , T i m e   (   s e c   )
0 .1
1
 
 1
Transient Thermal Response Curve
  Duty Cycle = 0.5
  0.2
0.1
0.1
 
0.05
  0.02
0.01
  0.01
 
Single Pulse
 
0.001
  10 5
104
103
10 2
101
t 1 ,Time (sec)
 
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J  A = 60°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
1 10
100
 
 
 
 
2015/8/31 
p.5 


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
EMF20N02VAThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMF20N02VATThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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