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PDF EMB08K04G Data sheet ( Hoja de datos )
| Número de pieza | EMB08K04G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB08K04G (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS 40V 40V
RDSON (MAX.) 17.5mΩ 8.8mΩ
ID
7.4A
10.5A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
EMB08K04G
LIMITS
Q1 Q2
±20 ±20
7.4 10.5
5.6 8.4
30 42
7.5 10.5
2.8 5.5
1.4 2.7
2
0.8
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
2015/9/7
p.1
1 page  
EMB08K04G
Q1 TYPICAL CHARACTERISTICS
On‐Region Characteristics
50
10V
7V
40
6V
30
5V
20
VG S = 4.5V
10
On‐Resistance Variation with Drain Current and Gate Voltage
3.0
2.5
2.0
VG S = 4.5V
1.5
1.0
5V
6V
7V
10V
0 0.5
01 2 3 45 6 7 8
0 10 20 30 40 50
V D S ,Drain‐Source Voltage( V )
I D ,Drain Current( A )
On‐Resistance Variation with Temperature
1.8
On‐Resistance Variation with Gate‐Source Voltage
0.050
I D = 6A
V G S = 10V
1.6
I D = 4A
0.040
1.4
0.030
1.2
1.0
0.8
0.020
0.010
TA = 125° C
TA = 25 °C
0.6 0
‐50 ‐25
0 25 50 75 100 125 150
2
4
6
8 10
Tj ,Junction Temperature(°C )
VG S ,Gate‐Source Voltage( V )
25
Transfer Characteristics
Body Diode Forward Voltage Variation
with Source Current and Temperature
60
V D S = 10V
20
T A = ‐55 °C
25 °C
10 VG S = 0V
15
125 °C
1
10
5
0.1
0.01
0.001
TA = 125°C
25°C
‐55°C
0
012
3
45
0.0001
0 0.2 0.4 0.6 0.8
1.0 1.2 1.4
VG S ,Gate‐Source Voltage( V )
VS D ,Body Diode Forward Voltage( V )
2015/9/7
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMB08K04G.PDF ] | |
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