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What is EMB20D03H?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB20D03H Datasheet PDF - Excelliance MOS

Part Number EMB20D03H
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 8 Pages



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No Preview Available ! EMB20D03H datasheet, circuit

 
 
N & PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
  NCH  PCH 
BVDSS 
30V  ‐30V 
RDSON (MAX.) 
6.5mΩ  20mΩ 
ID  26A  ‐15A 
 
UIS, Rg 100% Tested 
PbFree Lead Plating & Halogen Free 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
VGS 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
L = 0.1mH, ID=15A, RG=25Ω(N)
L = 0.1mH, ID=10A, RG=25Ω(P)
Repetitive Avalanche Energy2 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
PD 
Tj, Tstg 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
JunctiontoCase 
JunctiontoAmbient3 
RJC 
RJA 
 
 
2014/2/14 
EMB20D03H
LIMITS 
NCH 
PCH 
±20  ±20 
26  ‐15 
15  ‐9 
100  ‐60 
25  ‐20 
11.25 
5 
UNIT 
V 
A 
mJ 
5.6  2.5 
25 
10 
2 
1.28 
55 to 150 
W 
W 
°C 
MAXIMUM 
5 
62.5 
UNIT 
°C / W 
p.1 

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EMB20D03H equivalent
 
NChannel 
  EMB20D03H
  OnRegion Characteristics
100
  10V 7V 6V
5V
  80
VG S  = 4.5V
OnResistance Variation with Drain Current and Gate Voltage
3
2.5
 
60
 
  40
 
20
 
VG  S = 4.5V
2 5V
5.5V
1.5 6V
7V
10V
1
  0 0.5
0 0.5
1 1.5
2 2.5
3
0 20 40 60 80 100
VD  S ,DrainSource Voltage( V )
I D  ,Drain Current( A ) 
 
 
  OnResistance Variation with Temperature OnResistance Variation with GateSource Voltage
  1.8
0.015
I D  = 20A
I D  = 15A
  1.6 V G S = 10V
0.012
  1.4
 
1.2
 
1.0
 
0.009
0.006
TA   = 125° C
TA   = 25° C
  0.8
0.003
 
 
0.6
50
25
0 25 50 75 100 125 150
Tj ,Junction Temperature(°C )
0
2
468
VG  S ,GateSource Voltage( V )
10
 
  100
Transfer Characteristics
Body Diode Forward Voltage Variation
with Source Current and Temperature
60
  V D S = 10V
  80
  60
T A  = ‐55 °C
25 °C
10 VG S  = 0V
1
 
40
 
125 °C
0.1
TA  = 125°C
25°C
0.01
55°C
  20
 
0.001
 0
012
0.0001
3 45
0 0.2
0.4 0.6
0.8
1.0 1.2 1.4
VG  S ,GateSource Voltage( V )
VS D  ,Body Diode forward Voltage( V )
 
 
 
 
2014/2/14 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB20D03H electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMB20D03HThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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