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PDF EMB17C03G Data sheet ( Hoja de datos )
| Número de pieza | EMB17C03G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
30V ‐30V
17mΩ 20mΩ
ID 10A ‐8A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB17C03G
LIMITS
UNIT
Gate‐Source Voltage
VGS
N‐CH
P‐CH
V
±20 ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=8A, RG=25Ω(N)
L = 0.1mH, ID=‐7A, RG=25Ω(P)
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
10 ‐8
7 ‐6
40 ‐32
10 ‐10
3.2 2.45
1.6 1.23
2
0.8
‐55 to 150
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=8A, Rated VDS=30V N‐CH
100% UIS testing in condition of VD=15V, L=0.1mH, VG=‐10V, IL=‐7A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
Junction‐to‐Ambient3
203/1/10
RJC
RJA
25
62.5
°C / W
p.1
1 page  
N‐Channel
40
On‐Region Characteristics
VG S = 10V 6V
7V
5V
32
24
4.5V
16
8
0
01
2
34
VD S ‐ Drain Source Voltage( V )
On‐Resistance Variation with Temperature
1.9
I D = 10A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25
50 75 100 125
T J ‐ Junction Temperature (°C)
30
Transfer Characteristics
VD S = 10V
25
20
T A = ‐55° C
25° C
15
10
125° C
5
0
1 1.5 2.0 2.5 3.0
VG S ‐ Gate‐Source Voltage( V )
5
150
3.5
203/1/10
EMB17C03G
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4 V G S = 4.5 V
1.2
1.0
5.0 V
6.0 V
7.0 V
10 V
0.8
0
8 16 24
I D ‐ Drain Current( A )
32
40
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2
On‐Resistance Variation with Gate‐Source Voltage
I D = 5 A
T A = 125°C
T A = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
VG S = 0V
10 T A = 125° C
1 25° C
0.1 ‐55° C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS D ‐ Body Diode Forward Voltage( V )
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMB17C03G.PDF ] | |
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