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What is EMB60C06G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB60C06G Datasheet PDF - Excelliance MOS

Part Number EMB60C06G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB60C06G download ( pdf file ) link at the bottom of this page.





Total 8 Pages



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No Preview Available ! EMB60C06G datasheet, circuit

 
 
N & PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary:   
  NCH  PCH 
BVDSS 
RDSON (MAX.) 
60V  ‐60V 
60mΩ  90mΩ 
ID  5A  ‐4A 
 
 
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
VGS 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
2015/5/21 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
 
 
EMB60C06G
LIMITS 
NCH 
PCH 
±20  ±20 
5  ‐4 
3.6  ‐2.8 
20  ‐16 
2 
0.8 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
25 
62.5 
UNIT 
°C / W 
p.1 

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EMB60C06G equivalent
 
NChannel 
 
  OnRegion Characteristics
30
VG  S = 10V
7V 6V
 
24
 
5V
  18
4.5V
 
12
 
 6
 
0
 0
24 6
VD S  ‐ DrainSource Voltage( V )
8
 
  OnResistance Variation with Temperature
2.2
  2.0
I D  = 5A
VG  S = 10V
  1.8
  1.6
  1.4
1.2
  1.0
  0.8
  0.6
0.4
  50 25 0 25 50 75 100 125 150
T  J  ‐ J u n c t io n  T e m p e ra t u re  (°C )
 
 
  20
Transfer Characteristics
VD  S = 5V
 
16
 
T A  = ‐55°C
25°C
125°C
  12
 
8
 
 4
 0
1 2 3 4 56
  VG S  ‐ GateSource Voltage( V )
 
 
 
 
2015/5/21 
  EMB60C06G
OnResistance Variation with Drain Current and Gate Voltage
1.8
1.6
V G  S = 4.5 V
1.4
5.0 V
1.2
1.0
6.0 V
7.0 V
10 V
0.8
0
6 12 18 24
I D  ‐ Drain Current( A )
30
OnResistance Variation with GateSource Voltage
0.14
I D  = 4 A
0.12
0.10
0.08 T A  = 125°C
0.06
T A  = 25°C
0.04
0.02
0
2
46
8
VG  S ‐ GateSource Voltage( V )
10
100
10 V G S  = 0V
Body Diode Forward Voltage Variation
with Source Current and Temperature
1
0.1
0.01
TA   = 125°C
25°C
55°C
0.001
0.0001
0
0.2 0.4
0.6 0.8 1.0
VS D  ‐ Body Diode Forward Voltage( V )
1.2
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB60C06G electronic component.


Information Total 8 Pages
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Download [ EMB60C06G.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
EMB60C06GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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