EMB60C06G Datasheet PDF - Excelliance MOS
Part Number | EMB60C06G | |
Description | Field Effect Transistor | |
Manufacturers | Excelliance MOS | |
Logo | ||
There is a preview and EMB60C06G download ( pdf file ) link at the bottom of this page. Total 8 Pages |
Preview 1 page No Preview Available ! N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
60V ‐60V
60mΩ 90mΩ
ID 5A ‐4A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2015/5/21
ID
IDM
PD
Tj, Tstg
TYPICAL
EMB60C06G
LIMITS
N‐CH
P‐CH
±20 ±20
5 ‐4
3.6 ‐2.8
20 ‐16
2
0.8
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
|
|
N‐Channel
On‐Region Characteristics
30
VG S = 10V
7V 6V
24
5V
18
4.5V
12
6
0
0
24 6
VD S ‐ Drain‐Source Voltage( V )
8
On‐Resistance Variation with Temperature
2.2
2.0
I D = 5A
VG S = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
‐50 ‐25 0 25 50 75 100 125 150
T J ‐ J u n c t io n T e m p e ra t u re (°C )
20
Transfer Characteristics
VD S = 5V
16
T A = ‐55°C
25°C
125°C
12
8
4
0
1 2 3 4 56
VG S ‐ Gate‐Source Voltage( V )
2015/5/21
EMB60C06G
On‐Resistance Variation with Drain Current and Gate Voltage
1.8
1.6
V G S = 4.5 V
1.4
5.0 V
1.2
1.0
6.0 V
7.0 V
10 V
0.8
0
6 12 18 24
I D ‐ Drain Current( A )
30
On‐Resistance Variation with Gate‐Source Voltage
0.14
I D = 4 A
0.12
0.10
0.08 T A = 125°C
0.06
T A = 25°C
0.04
0.02
0
2
46
8
VG S ‐ Gate‐Source Voltage( V )
10
100
10 V G S = 0V
Body Diode Forward Voltage Variation
with Source Current and Temperature
1
0.1
0.01
TA = 125°C
25°C
‐55°C
0.001
0.0001
0
0.2 0.4
0.6 0.8 1.0
VS D ‐ Body Diode Forward Voltage( V )
1.2
p.5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB60C06G electronic component. |
Information | Total 8 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ EMB60C06G.PDF Datasheet ] |
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Part Number | Description | MFRS |
EMB60C06G | The function is Field Effect Transistor. Excelliance MOS | |
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