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PDF EMBB5B10G Data sheet ( Hoja de datos )
| Número de pieza | EMBB5B10G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Dual P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐100V
RDSON (MAX.)
250mΩ
ID ‐2.5A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/9/21
EMBB5B10G
LIMITS
±20
‐2.5
‐1.8
‐10
2
0.8
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page  
EMBB5B10G
10
I D = ‐ 1.5A
Gate Charge Characteristics
8
V D S = ‐ 50V ‐ 80V
6
4
2
0
0 10 20 30
Q g ‐ Gate Charge(nC)
40
Capacitance Characteristics
3000
2700
f = 1MHz
V G S = 0 V
2400
2100
Ciss
1800
1500
1200
900
600
300
0
0
Coss
Crss
10
20 30 40 50
‐VD S ‐ Drain‐Source Voltage( V )
60
Maximum Safe Operating Area
100
10
R D S ( O N )Limit
1
0.1
VG S = ‐10V
Single Pulse
R JA = 125°C/W
TA = 25°C
0.010.1
1
1001u0SuS
1mS
10mS
DC100mS
10 100
‐VD S ‐ Drain‐Source Voltage( V )
1000
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2012/9/21
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMBB5B10G.PDF ] | |
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