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Número de pieza | EMB16P04V | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB16P04V (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐40V
D
RDSON (MAX.)
16mΩ
ID
‐20A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐15A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB16P04V
LIMITS
±20
‐20
‐13
‐80
‐15
11.25
5.62
2.5
1.25
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/5
TYPICAL
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page EMB16P04V
10
I D = ‐ 10A
8
Gate Charge Characteristics
6
VD S = ‐ 20V
4
2
0
0 15 30 45
Q g ‐ Gate Charge( nC )
60
5000
4000
3000
2000
1000
0
0
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
Coss
Crss
10 20
‐ VD S , Drain‐Source Voltage( V )
30
40
Maximum Safe Operating Area
100
10 R D S (O N ) Limit
100μs
1ms
10ms
100ms
1s
1 10s
DC
0.1
VG S = ‐10V
Single Pulse
R J A = 50°C/W
TA = 25°C
0.01
0.1
1 10
‐VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/12/5
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB16P04V.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB16P04A | Field Effect Transistor | Excelliance MOS |
EMB16P04V | Field Effect Transistor | Excelliance MOS |
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