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What is EMB09P03H?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB09P03H Datasheet PDF - Excelliance MOS

Part Number EMB09P03H
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB09P03H download ( pdf file ) link at the bottom of this page.





Total 6 Pages



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No Preview Available ! EMB09P03H datasheet, circuit

 
 
PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
9.5mΩ 
ID 
70A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMB09P03H
LIMITS 
UNIT 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
L = 0.1mH, ID=20A, RG=25Ω
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
PD 
Tj, Tstg 
±25 
70 
50 
140 
20 
20 
50 
26 
55 to 150 
V 
A 
mJ 
W 
°C 
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=15A, Rated VDS=30V PCH
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
2012/3/22 
 
 
2.5 
°C / W 
50 
p.1 

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EMB09P03H equivalent
  EMB09P03H
 
10
I D  = ‐ 25A
Gate Charge Characteristics
8
VD  S   = ‐ 5V
‐ 10V
‐ 15V
6
5000
4000
3000
Capacitance Characteristics
f = 1 MHz
VG  S = 0 V
Ciss
4 2000
2 1000
Coss
0
0
15 30
45
60 75
Q g  ‐ Gate Charge( nC )
0 Crss
0 5 10 15 20 25 30
‐ VD S  , DrainSource Voltage( V )
300
200
100 R d s ( o n ) Limit
50
MAXIMUM SAFE OPERATING AREA
10μ  s
100μ  s
20 1ms
10
5
2
1
0.5
0.5
10ms
D1C00ms
VG  S = ‐10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
1 10
VD S  ,DRAIN‐ SOURCE VOLTAGE( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
RSθI N JC  G= L2E. 5P° UC/LWSE
TC  = 25° C
2500
2000
1500
1000
500
0
0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC ) 
1000
1
D u ty  C y cle  =  0 .5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
1 02
1 01
Transient Therm al Response Curve
Notes:
DM
1 10
t 1 ,Tim e ( m SEC  )
1 .D u ty  C y cle ,D  =
t1
t2
2 .Rθ  J C  =2 .5 °C /W
3 .TJ  ‐  TC   =  P *  R θ  J C  (t)
4 .Rθ  J C (t)= r(t) *  RθJC
100
1000
2012/3/22 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB09P03H electronic component.


Information Total 6 Pages
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