|
|
Número de pieza | EMB07P03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB07P03G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
7.5mΩ
ID
‐15A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB07P03G
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐25A, RG=25Ω
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
±20
‐15
‐11
‐60
‐25
31.25
2.5
1.25
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐15A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/4/24
25
°C / W
50
p.1
1 page 10
I D = ‐ 15A
8
6
Gate Charge Characteristics
VD S = ‐ 5V
‐ 15V
‐ 10V
4
2
0
0 15 30 45 60
Q g ‐ Gate Charge( nC )
75
Maximum Safe Operating Area
100
RDS(ON) LIMIT
10
1
100μs
1ms
10ms
100ms
1s
10s
DC
VGS= ‐10V
0.1 SINGLE PULSE
RθJA= 125° C/W
TA= 25° C
0.01
0.01
0.1 1 10
‐VDS, Drain‐Source Voltage( V )
100
EMB07P03G
7500
6000
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
4500
Ciss
3000
1500
0
0
Coss
Crss
5 10 15 20
‐ V D S , Drain‐Source Voltage( V )
25
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
30
20
10
0
0.001
0.01 0.1 1 10 100 1000
t 1 ,Time (sec)
1
0.1
0.01
D=0.5
0.2
0.1
0.05
0.02
0.01
Transient Thermal Resistance Curve
SINGLE PULSE
0.001
0.0001
0.001
0.01 0.1
t1,TIME( sec )
1
RθJA(t)= r(t) * RθJA
RθJA= 125° C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
2012/4/24
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB07P03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB07P03A | Field Effect Transistor | Excelliance MOS |
EMB07P03CS | Field Effect Transistor | Excelliance MOS |
EMB07P03G | Field Effect Transistor | Excelliance MOS |
EMB07P03V | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |