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PDF EMB12P03G Data sheet ( Hoja de datos )
| Número de pieza | EMB12P03G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)(VGS=‐10V) 10mΩ
ID
‐13A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB12P03G
LIMITS
UNIT
Gate‐Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
ID
IDM
‐13
‐10
‐50
Avalanche Current
IAS ‐15
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐15A, RG=25Ω
L = 0.05mH
EAS
EAR
11.25
5.62
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
2.5
1
‐55 to 150
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐10A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
25
°C / W
50
2012/12/17
p.1
1 page  
10
I D = ‐ 12A
Gate Charge Characteristics
8
6
VD S = ‐ 5V
‐ 10V
‐ 15V
4
2
0
0 15 30 45 60
Q g ‐ Gate Charge( nC )
75
4000
3200
2400
1600
800
0
0
EMB12P03G
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
Coss
Crss
5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
25
30
Maximum Safe Operating Area
100
R D S (O N ) Limit
10
100μs
1ms
10ms
1
0.1
VG S = ‐10V
Single Pulse
R J A = 125°C/W
T A = 25°C
100ms
1s
10s
DC
0.01
0.1
1 10
‐VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Transient Thermal Response Curve
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/12/17
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB12P03G.PDF ] | |
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