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What is EMB80P03G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB80P03G Datasheet PDF - Excelliance MOS

Part Number EMB80P03G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 5 Pages



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No Preview Available ! EMB80P03G datasheet, circuit

 
 
PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
80mΩ 
ID 
3.5A 
G
 
 S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
 
 
2012/12/31 
EMB80P03G
LIMITS 
±20 
3.5 
3 
14 
2.5 
1 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
25 
50 
UNIT 
°C / W 
p.1 

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EMB80P03G equivalent
  EMB80P03G
 
 
 
  10
  ID   = ‐ 3A
Gate Charge Characteristics
 8
 6
VD S  = ‐ 5V
‐ 10V
  ‐ 15V
 4
 2
 
 0
0
 
24 68
Q g  ‐ Gate Charge( nC )
10
480
400
320
240
160
80
0
0
Capacitance Characteristics
Ciss
f = 1MHZ
VG  S = 0V
Coss
Crss
5 10 15 20
‐ VD  S , DrainSource Voltage( V )
25
30
 
100
 
Maximum Safe Operating Area
  10
  R D S ( O N  )Limit
 1
100μ   s
1ms
10ms
100ms
1s
  10s
DC
  0.1
VG  S = ‐10V
SINGLE PULSE
   0.01 RTθ A   J =A = 2 15°2 C5° C/W
0.1
1
10
  VD  S ,DrainSource Voltage( V )
50
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 125° C/W
40 TA  = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
 
1
  Duty Cycle = 0.5
Transient Thermal Response Curve
  0.2
  0.1
0.1
0.05
 
0.02
  0.01
0.01
  Single Pulse
 
  0.001
10 4 103 102
 
10 1 1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A =125°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
10 100
1000
 
 
 
 
2012/12/31 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB80P03G electronic component.


Information Total 5 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMB80P03GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMB80P03JThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMB80P03JSThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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