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PDF EMB20P03P Data sheet ( Hoja de datos )
| Número de pieza | EMB20P03P | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
20mΩ
ID ‐8A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
EMB20P03P
LIMITS
±25
‐8
‐6
‐32
1.47
0.58
‐55 to 150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
385°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/9/18
TYPICAL
MAXIMUM
18
85
UNIT
°C / W
p.1
1 page  
EMB20P03P
10
I D = ‐ 8A
8
6
4
Gate Charge Characteristics
VD S = ‐ 5V
‐ 15V
‐ 10V
2
0
0 5 10 15 20
Q g ‐ Gate Charge( nC )
25
2000
1600
1200
800
400
0
0
Capacitance Characteristics
Ciss
f = 1 MHz
VG S = 0 V
Coss
Crss
5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
25
30
Maximum Safe Operating Area
100
10 R D S (O N ) Limit
100μs
1ms
10ms
1
0.1
VG S = ‐10V
Single Pulse
R J A = 85°C/W
TA = 25°C
100ms
1s
10s
DC
0.01
0.1
1 10
‐VD S ‐ Drain‐Source Voltage( V )
100
1
D=0.5
Transient Thermal Response Curve
Single Pulse Maximum Power Dissipation
40
Single Pulse
Rθ J A = 85°C/W
TA = 25°C
30
20
10
0
0.0001
0.001
0.01 0.1
t 1 ,Time ( SEC )
1
10
100
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1 , Time( ms )
Rθ J A (t)= r(t) *RθJA
Rθ JA = 85 °C/W
P(pk)
t1
t2
Tj ‐ TA = P * Rθ J A (t)
Duty Cycle,D= t1 / t2
10 100
1000
2013/9/18
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB20P03P.PDF ] | |
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