|
|
PDF EMB12P03A Data sheet ( Hoja de datos )
| Número de pieza | EMB12P03A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EMB12P03A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
12mΩ
ID
‐45A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐25A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB12P03A
LIMITS
±20
‐45
‐32
‐90
‐25
31.25
15.6
50
20
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/6/21
TYPICAL
MAXIMUM
2.5
62.5
UNIT
°C / W
p.1
1 page  
10
I D = ‐ 20A
Gate Charge Characteristics
8
VD S = ‐ 5V
‐ 10V
‐ 15V
6
4
2
0
0
15 30
45
60
Q g ‐ Gate Charge( nC )
75
1000
M a xim u m S a fe O p e ra tin g A re a
100
10
R D S ( O N L) im it
1S
1
0
0m
S
1
0m
1
S
m
S
100
μ
S
DC 10S
1
V G S = ‐ 1 0 V
S in g le P u lse
R JC = 2 . 5 ° C / W
T C = 2 5 ° C
0 .1
0 .1
1 10
‐ V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
100
1
Duty Cycle = 0.5
0.5
Tran sien t Th erm al R esp o n se C u rve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1.Duty Cycle,D =
t1
t2
2 . R θ J C = 2 .5 °C / W
3 .TJ ‐ T C = P * R θ J C (t)
4 . Rθ J C ( t ) = r (t ) * Rθ JC
100
2013/6/21
EMB12P03A
3000
2400
1800
1200
600
0
0
Capacitance Characteristics
Ciss
f = 1 MHz
VG S = 0 V
Coss
Crss
5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
25
30
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000 RSθI N JC G= L2E. 5P° UC/LWSE
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10 100
SINGLE PULSE TIME ( mSEC )
1000
1000
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB12P03A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMB12P03A | Field Effect Transistor | Excelliance MOS |
| EMB12P03G | Field Effect Transistor | Excelliance MOS |
| EMB12P03H | Field Effect Transistor | Excelliance MOS |
| EMB12P03V | Field Effect Transistor | Excelliance MOS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |