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Número de pieza | EMB20P03A | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB20P03A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
20mΩ
ID
‐35A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐10A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB20P03A
LIMITS
±25
‐35
‐26
‐70
‐10
5
2.5
42
16
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2013/9/18
TYPICAL
MAXIMUM
3
62.5
UNIT
°C / W
p.1
1 page EMB20P03A
10
I D = ‐ 20A
8
Gate Charge Characteristics
6
VD S = ‐ 5V
‐ 10V
‐ 15V
4
2000
1600
1200
800
Capacitance Characteristics
Ciss
f = 1 MHz
VG S = 0 V
2
0
0 5 10 15 20 25
Q g ‐ Gate Charge( nC )
400
0
0
Coss
Crss
5 10 15 20
‐ VD S , Drain‐Source Voltage( V )
25
30
1000
M a x im u m S a fe O p e ra tin g A re a
100
10
R
D
S ( O N L)
im
i
t
1S
1
0
0
m
S
1
0
1m
mS
S
100 μ S
DC 10S
1
V G S = ‐ 1 0 V
S in g le P u lse
R JC = 3 ° C / W
T C = 2 5 ° C
0 .1
0 .1
1 10
‐ V D S ‐ D r a i n ‐ S o u r c e V o lt a g e ( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 3°C/W
40 TC = 25°C
30
20
10
0
0.001
0.01
0.1 1
t 1 ,Time (sec)
10 100
1
Duty Cycle = 0.5
0.5
Tran sie n t The rm al R esp o n se C u rve
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
0.01
Single Pulse
10‐2
1 0‐1
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1.Duty Cycle,D =
t1
t2
2 .Rθ J C =3°C/W
3 .TJ ‐ T C = P * R θ J C ( t )
4 .Rθ J C (t)=r(t) * RθJC
100
1000
2013/9/18
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMB20P03A.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB20P03A | Field Effect Transistor | Excelliance MOS |
EMB20P03G | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
EMB20P03H | Field Effect Transistor | Excelliance MOS |
EMB20P03P | Field Effect Transistor | Excelliance MOS |
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