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EMB20P03A Datasheet PDF - Excelliance MOS

Part Number EMB20P03A
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 



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EMB20P03A datasheet, circuit
 
 
PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
20mΩ 
ID 
35A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
EMB20P03A
LIMITS 
±25 
35 
26 
70 
10 
5 
2.5 
42 
16 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
2013/9/18 
TYPICAL 
 
 
MAXIMUM 
3 
62.5 
UNIT 
°C / W 
p.1 

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EMB20P03A equivalent
  EMB20P03A
 
10
I D  = ‐ 20A
8
Gate Charge Characteristics
6
VD  S   = ‐ 5V
‐ 10V
‐ 15V
4
2000
1600
1200
800
Capacitance Characteristics
Ciss
f = 1 MHz
VG S  = 0 V
2
0
0 5 10 15 20 25
Q g  ‐ Gate Charge( nC )
400
0
0
Coss
Crss
5 10 15 20
‐ VD  S , DrainSource Voltage( V )
25
30
1000
M a x im u m  S a fe  O p e ra tin g  A re a
100
10
R
 
  
D
 S ( O  N L)
im
i
t
1S
1
0
0
m
S
1
0
1m
mS
S
100 μ S
DC 10S
1
V  G S  =   ‐ 1 0 V
S in g le  P u lse
R   JC      =   3 ° C / W
T C     =  2 5 ° C
0 .1
0 .1
1 10
V  D S    ‐   D r a i n S o u r c e   V o lt a g e (   V   )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J C = 3°C/W
40 TC  = 25°C
30
20
10
0
0.001
0.01
0.1 1
t 1 ,Time (sec)
10 100
1
Duty Cycle = 0.5
0.5
Tran sie n t The rm al R esp o n se C u rve
0.3
0.2 0.2
 
0.1 0.1
  0.05
  0.05
0.02
  0.03
0.01
0.02
  0.01
Single Pulse
  102
1 01
 
 
 
Notes:
DM
1 10
t 1 ,Tim e ( m SEC )
1.Duty Cycle,D =
t1
t2
2 .Rθ  J C  =3°C/W
3 .TJ  ‐   T C   =  P  *  R θ  J C  ( t )
4 .Rθ  J C (t)=r(t) * RθJC
100
1000
2013/9/18 
p.5 

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Information Total 6 Pages
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