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EMB16P04A Datasheet PDF - Excelliance MOS

Part Number EMB16P04A
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 



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EMB16P04A datasheet, circuit
 
 
PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
40V 
D
RDSON (MAX.) 
16mΩ 
ID 
25A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=25A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
2012/12/05 
EMB16P04A
LIMITS 
±20 
25 
18 
100 
25 
31.25 
15 
50 
17 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
2.5 
75 
UNIT 
°C / W 
p.1 

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EMB16P04A equivalent
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
  EMB16P04A
10
I D  = ‐ 25A
8
Gate Charge Characteristics
6
VD  S = ‐ 20V
4
2
0
0 15 30 45
Q g  ‐ Gate Charge( nC )
60
5000
4000
3000
2000
1000
0
0
Capacitance Characteristics
f = 1 MHz
VG  S = 0 V
Ciss
Coss
Crss
10 20
‐ VD S  , DrainSource Voltage( V )
30
40
MAXIMUM SAFE OPERATING AREA
300
100 R d s (o  n ) Limit
10
10μ  s
100μ  s
1ms
10ms
D10C0ms
1
0.5
0.5
VG  S = ‐10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
1 10
VD S  ,DRAIN‐ SOURCE VOLTAGE( V )
100
1
Duty Cycle = 0.5
Effective Transient Thermal Impedance
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
t1 , Pulse Width(ms)
0.01
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ   JC = 2.5° C/W
40 TC  = 25° C
30
20
10
0
0.001
0.01 0.1 1
t 1 ,Time ( sec )
10 100
Notes:
PDM
t1
t2 t1
1.Duty Cycle,D =
t2
2.Rθ  J C  =2.5° C/W
3.TJ  ‐  TC   = P * Rθ  J C (t)
4.Rθ  J C  (t)=r(t) * RθJC
0.1 1
2012/12/05 
p.5 

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Information Total 6 Pages
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