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PDF EMB25P04A Data sheet ( Hoja de datos )
| Número de pieza | EMB25P04A | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐40V
D
RDSON (MAX.)
25mΩ
ID
‐20A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐15A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2012/10/25
EMB25P04A
LIMITS
±20
‐20
‐12
‐80
‐15
11.25
5.6
42
16
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
3
62
UNIT
°C / W
p.1
1 page  
Gate Charge Characteristics
10
I D = ‐20A
8
6 VD S = ‐15V ‐20V
4
2000
1600
1200
800
EMB25P04A
Capacitance Characteristics
f = 1 MHz
VG S = 0 V
Ciss
2
400
0
06
12 18 24 30
Q g ,Gate Charge( nC )
Coss
0 Crss
0 10 20 30 40
‐ VD S , Drain‐Source Voltage( V )
MAXIMUM SAFE OPERATING AREA
300
100
R d s (o n ) Limit
10
100μ s
1ms
10ms
D10C0ms
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J C = 3°C/W
40 TC = 25°C
30
20
1
VG S = ‐10V
SINGLE PULSE
Rθ J C = 3 °C/W
Tc = 25 °C
10
0.5
0
0.5 1
10
100
0.001
0.01
0.1 1
10 100
‐VD S ,DRAIN‐ SOURCE VOLTAGE( V )
t 1 ,Time (sec)
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
Notes:
DM
0.02
0.03
0.01
0.02
1.Duty Cycle,D =
t1
t2
2.Rθ J C =3°C/W
Single Pulse
3.TJ ‐ TC = P * Rθ J C (t)
0.01
10‐2
10‐1
1
4.Rθ J C (t)=r(t) * RθJC
10 100
1000
t 1 ,Time ( mSEC )
2012/10/25
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB25P04A.PDF ] | |
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