EMBB0P10A Datasheet PDF - Excelliance MOS
Part Number | EMBB0P10A | |
Description | Field Effect Transistor | |
Manufacturers | Excelliance MOS | |
Logo | ||
There is a preview and EMBB0P10A download ( pdf file ) link at the bottom of this page. Total 6 Pages |
Preview 1 page No Preview Available ! P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐100V
D
RDSON (MAX.)
205mΩ
ID
‐10A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐12A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/9/21
EMBB0P10A
LIMITS
±20
‐10
‐7
‐40
‐12
7.2
3.6
29
12
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
4.3
62.5
UNIT
°C / W
p.1
|
|
EMBB0P10A
10
I D = ‐ 10A
Gate Charge Characteristics
8
V D S = ‐ 50V ‐ 80V
6
4
2
0
0 10 20 30
Q g ‐ Gate Charge(nC)
100
10
1
M a x im u m S a fe O p e ra tin g A re a
R D S ( O N )Lim it
100uS 10uS
1mS
D
1
C
10m
00mS
S
40
0 .1
V G S = ‐ 1 0 V
S in g le P u lse
R JC = 4 . 3 ° C / W
T C = 2 5 ° C
0 .0 1
1 10 100
‐ V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
1000
Transient Thermal Response Curve
3000
2700
2400
C a p a c ita n c e C h a ra c te ris tic s
f = 1M H z
V G S = 0 V
2100
1800
C iss
1500
1200
900
600
Coss
300
0 Crss
0
20 40 60 80
‐VD S ‐ D r a in ‐S o u r c e V o lta g e ( V )
100
Single Pulse Maximum Power Dissipation
3000 SRθi n JC g =le 4 P.3u Cl°s/eW
TC = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10
Single Pulse Time( sec )
100
1000
100
D=0.5
0.2
10‐1 0.1
0.05
0.02
0.01
10‐2
single pulse
10‐5 10‐4 10‐3 10‐2
t1,Time( sec )
※Note :
1. RθJC(t)=4.3°C/W Max.
2. Duty Cycle, D=t1/ t2
3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
10‐1 100
101
2012/9/21
p.5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMBB0P10A electronic component. |
Information | Total 6 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ EMBB0P10A.PDF Datasheet ] |
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Part Number | Description | MFRS |
EMBB0P10A | The function is Field Effect Transistor. Excelliance MOS | |
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