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What is EMBB0P10A?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMBB0P10A Datasheet PDF - Excelliance MOS

Part Number EMBB0P10A
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 6 Pages



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No Preview Available ! EMBB0P10A datasheet, circuit

 
 
PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
100V 
D
RDSON (MAX.) 
205mΩ 
ID 
10A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=12A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
2012/9/21 
EMBB0P10A
LIMITS 
±20 
10 
7 
40 
12 
7.2 
3.6 
29 
12 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
4.3 
62.5 
UNIT 
°C / W 
p.1 

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EMBB0P10A equivalent
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
  EMBB0P10A
10
I D  = ‐ 10A
Gate Charge Characteristics
8
V D S   = ‐ 50V ‐ 80V
6
4
2
0
0 10 20 30
Q g  ‐ Gate Charge(nC)
100
10
1
M a x im u m  S a fe  O p e ra tin g  A re a
R   D  S ( O  N )Lim it
100uS 10uS
1mS
D
1
C
10m
00mS
S
40
0 .1
    V G   S   =   ‐ 1 0 V
S in g le  P u lse
R   JC  =   4 . 3 ° C / W
    T C      =   2 5 ° C
0 .0 1
1 10 100
V D   S    ‐   D r a i n S o u r c e   V o l t a g e (   V   )
1000
Transient Thermal Response Curve
3000
2700
2400
C a p a c ita n c e  C h a ra c te ris tic s
f  =  1M H z
V  G S  =  0  V
2100
1800
C iss
1500
1200
900
600
Coss
300
0 Crss
0
20 40 60 80
VD S  ‐ D r a in S o u r c e  V o lta g e ( V  )
100
Single Pulse Maximum Power Dissipation
3000 SRθi n JC g =le 4 P.3u Cl°s/eW
TC  = 25° C
2500
2000
1500
1000
500
0 0.01
0.1 1 10
Single Pulse Time( sec ) 
100
1000
100
D=0.5
0.2
101 0.1
0.05
0.02
0.01
102
single pulse
105 104 103 102
t1,Time( sec )
Note :
  1. RθJC(t)=4.3°C/W Max.
  2. Duty Cycle, D=t1/ t2
  3. TJM ‐ TC=PDM*RθJC(t)
PDM
t1
t2
101 100
101
2012/9/21 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMBB0P10A electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMBB0P10AThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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