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What is EMB15K03GP?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB15K03GP Datasheet PDF - Excelliance MOS

Part Number EMB15K03GP
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB15K03GP download ( pdf file ) link at the bottom of this page.





Total 8 Pages



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No Preview Available ! EMB15K03GP datasheet, circuit

 
 
Dual Asymmetric NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
  NCHQ1  NCHQ2 
BVDSS 
30V  30V 
RDSON (MAX.) 
22mΩ 
15.5mΩ 
ID  8A  9A 
 
UIS, Rg 100% Tested 
PbFree Lead Plating & Halogen Free 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
L = 0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy2 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
EMB15K03GP
LIMITS 
±20  ±20 
8  9 
5.5  6 
32  36 
10  10 
5  5 
2.5  2.5 
2 
1.1 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
2012/2/21 
TYPICAL 
 
 
MAXIMUM 
25 
62.5 
UNIT 
°C / W 
p.1 

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EMB15K03GP equivalent
 
NChannelQ1
 
  30
OnRegion Characteristics
VG S = 10V 6V
  25 7V 5V
 
20
 
4.5V
  15
  10
 5
 
0
  01 2
34
VD S  ‐ Drain Source Voltage(V)
5
 
  OnResistance Variation with Temperature
1.9
  I D  = 8A
VG S  = 10V
  1.6
  1.3
 
  1.0
  0.7
 
0.4
  50 25 0 25 50 75 100 125 150
T J  ‐ Junction Temperature (° C)
 
 
  Transfer Characteristics
18
  VD S  = 10V
  15
  12
TA   = ‐55°C
25°C
 9
 
6
 
 3
125°C
 0
1 1.5
2.0
2.5 3.0
3.5
  VG S  ‐ GateSource Voltage( V )
 
 
 
2012/2/21 
EMB15K03GP
 
OnResistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V G  S = 4.5 V
5.0 V
6.0 V
7.0 V
10 V
6 12 18
I D  ‐ Drain Current(A)
24 30
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
OnResistance Variation with GateSource Voltage
I D  = 4 A
T A  = 125°C
T A  = 25°C
46
8
VG  S ‐ GateSource Voltage( V )
10
Body Diode Forward Voltage Variation 
with Source Current and Temperature
100
VG S   = 0V
10 T A  = 125° C
1 25° C
0.1 55° C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS D  ‐ Body Diode Forward Voltage( V )
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB15K03GP electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMB15K03GPThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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