EMB15K03GP Datasheet PDF - Excelliance MOS
Part Number | EMB15K03GP | |
Description | Field Effect Transistor | |
Manufacturers | Excelliance MOS | |
Logo | ||
There is a preview and EMB15K03GP download ( pdf file ) link at the bottom of this page. Total 8 Pages |
Preview 1 page No Preview Available ! Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V 30V
RDSON (MAX.)
22mΩ
15.5mΩ
ID 8A 9A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB15K03GP
LIMITS
±20 ±20
8 9
5.5 6
32 36
10 10
5 5
2.5 2.5
2
1.1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/2/21
TYPICAL
MAXIMUM
25
62.5
UNIT
°C / W
p.1
|
|
N‐Channel‐Q1
30
On‐Region Characteristics
VG S = 10V 6V
25 7V 5V
20
4.5V
15
10
5
0
01 2
34
VD S ‐ Drain Source Voltage(V)
5
On‐Resistance Variation with Temperature
1.9
I D = 8A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25 0 25 50 75 100 125 150
T J ‐ Junction Temperature (° C)
Transfer Characteristics
18
VD S = 10V
15
12
TA = ‐55°C
25°C
9
6
3
125°C
0
1 1.5
2.0
2.5 3.0
3.5
VG S ‐ Gate‐Source Voltage( V )
2012/2/21
EMB15K03GP
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
V G S = 4.5 V
5.0 V
6.0 V
7.0 V
10 V
6 12 18
I D ‐ Drain Current(A)
24 30
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
On‐Resistance Variation with Gate‐Source Voltage
I D = 4 A
T A = 125°C
T A = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
VG S = 0V
10 T A = 125° C
1 25° C
0.1 ‐55° C
0.01
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2 1.4
VS D ‐ Body Diode Forward Voltage( V )
p.5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB15K03GP electronic component. |
Information | Total 8 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ EMB15K03GP.PDF Datasheet ] |
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Part Number | Description | MFRS |
EMB15K03GP | The function is Field Effect Transistor. Excelliance MOS | |
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